Vapor Deposited Cr-doped ZnS Thin Films: Towards Optically Pumped Mid-Infrared Waveguide Lasers

Compact, affordable mid-IR lasers require the development of gain materials in waveguide form. We report on the high vacuum deposition of Cr:ZnS films with concentration ranging from 1018-1020 dopants/cm3 . At low concentrations, films display well-isolated absorption associated with substitutional Cr2+ ions in the lattice. Spatial modulation of the dopant concentration suppresses the absorption associated with this substitution. Lateral crystallite sizes less than 30 nm are associated with the lowest substrate temperatures (\u3c50 °C) used during deposition, and waveguide losses as low as 8dB/cm are observed. These materials are promising candidates as gain media for fabrication of waveguide mid-IR lasers

Band-edge modification and mid-infrared absorption of co-deposited FexZn1-xS thin films

The bandgap of iron-doped ZnS has been reported by others to change significantly under the addition of a few atomic percent of iron, which would have significant implications for solar energy. Here, thin films of FexZn1-xS with x = 0 to 0.24 were made by co-deposition of Fe and ZnS using thermal evaporation. In contrast to results on nanoparticles and electrodeposited materials, all co-deposited films had optical properties consistent with a direct bandgap of ~3-3.5 eV. The absorption peak at 2.7 µm from substitutional Fe2+ in the ZnS films was well isolated up to concentrations of over 2% (~1021cm−3), despite the small crystallite size, suggesting the films may have applications as mid-infrared saturable absorbers. Increasing dopant concentration resulted in band edge softening. Density functional calculations are presented and are consistent with our observations of the Fe:ZnS films, demonstrating spin-polarized midgap states and additional states at the band edge