Optical quality assurance of GEM foils

An analysis software was developed for the high aspect ratio optical scanning system in the Detec- tor Laboratory of the University of Helsinki and the Helsinki Institute of Physics. The system is used e.g. in the quality assurance of the GEM-TPC detectors being developed for the beam diagnostics system of the SuperFRS at future FAIR facility. The software was tested by analyzing five CERN standard GEM foils scanned with the optical scanning system. The measurement uncertainty of the diameter of the GEM holes and the pitch of the hole pattern was found to be 0.5 {\mu}m and 0.3 {\mu}m, respectively. The software design and the performance are discussed. The correlation between the GEM hole size distribution and the corresponding gain variation was studied by comparing them against a detailed gain mapping of a foil and a set of six lower precision control measurements. It can be seen that a qualitative estimation of the behavior of the local variation in gain across the GEM foil can be made based on the measured sizes of the outer and inner holes.Comment: 12 pages, 29 figure

Development of Quality Assurance Methods for Particle Detectors

The purpose of this thesis is to develop, establish and apply novel quality assurance (QA) methods for nuclear and high-energy physics particle detectors. The detectors should be maintenance-free since devices can only be replaced during long technical shut-downs. Furthermore, the detector modules must endure handling during installation and withstand heat generation and cooling during operations. Longevity in a severe radiation environment must also be assured. Visual inspection and electrical characterisation of particle detectors are presented in this work. The detector studies included in this thesis, while based on different technologies, were united by the demand for reliable and enduring particle detectors. Four major achievements were accomplished during the the Gas Electron Multiplier (GEM) foil studies: a software analysis capable of precise foil inspection was developed, a rigorous calibration procedure for the Optical Scanning System was established, a detailed 3D GEM foil hole geometry study was performed for the first time and an impact of the hole geometry on the detector gain was confirmed. Promising results were also achieved during the solid-state detectors studies. A new technique for assuring the height uniformity of the chip interconnections in the pixel detector modules was proposed and implemented. Two semiconductor detectors (Si and GaAs) were designed, microfabricated and tested. The consistency of the QA results demonstrated the detectors reliability and preparedness to serve the needs of future particle and nuclear physics experiments. During the performed studies, strict calibration techniques and measurement uncertainties were applied to guarantee the trustworthy accuracy of the used measurement tools. Thus, all quality assurance techniques presented in this thesis were held in clean conditions at monitored temperature and humidity. The combined results of this thesis demonstrate the importance of adequate quality assurance for guaranteed accurate data collection and long operating life of the detector.Popular abstract is not obligatory for non Finnish PhD students in HI

Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

We report on the fabrication of capacitively (AC) coupled n(+)-in-p pixel detectors on magnetic Czochralski silicon substrates. In our devices, we employ a layer of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) as dielectric and field insulator, instead of the commonly used silicon dioxide (SiO2). As shown in earlier research, Al2O3 thin films exhibit high negative oxide charge, and can thus serve as a substitute for p-stop/p-spray insulation implants between pixels. In addition, they provide far higher capacitance densities than SiO2 due to their high dielectric constant, permitting more efficient capacitive coupling of pixels. Furthermore, metallic titanium nitride (TiN) bias resistors are presented as an alternative to punch-through or poly-Si resistors. Devices obtained by the above mentioned process are characterized by capacitance-voltage and current-voltage measurements, and by 2 MeV proton microprobe. Results show the expected high negative charge of the Al2O3 dielectric, uniform charge collection efficiency over large areas of pixels, and acceptable leakage current densities.Peer reviewe

Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications

An increase in the radiation levels during the high-luminosity operation of the Large Hadron Collider calls for the development of silicon-based pixel detectors that are used for particle tracking and vertex reconstruction. Unlike the conventionally used conductively coupled (DC-coupled) detectors that are prone to an increment in leakage currents due to radiation, capacitively coupled (AC-coupled) detectors are anticipated to be in operation in future collider experiments suitable for tracking purposes. The implementation of AC-coupling to micro-scale pixel sensor areas enables one to provide an enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of new generation capacitively coupled (AC-coupled) pixel sensors with coupling insulators having good dielectric strength and radiation hardness simultaneously. The AC-coupling insulator thin films were aluminum oxide (Al2O3) and hafnium oxide (HfO2) grown by the atomic layer deposition (ALD) method. A comparison study was performed based on the dielectric material used in MOS, MOSFET, and AC-coupled pixel prototypes processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates. Post-irradiation studies with 10 MeV protons up to a fluence of 10(15) protons/cm(2) suggest HfO2 to be a better candidate as it provides higher sensitivity with negative charge accumulation on irradiation. Furthermore, even though the nature of the dielectric does not affect the electric field within the AC-coupled pixel sensor, samples with HfO2 are comparatively less susceptible to undergo an early breakdown due to irradiation. Edge-transient current technique (e-TCT) measurements show a prominent double-junction effect as expected in heavily irradiated p-type detectors, in accordance with the simulation studies.Peer reviewe

Beam test performance of a prototype module with Short Strip ASICs for the CMS HL-LHC tracker upgrade

The Short Strip ASIC (SSA) is one of the four front-end chips designed for the upgrade of the CMS Outer Tracker for the High Luminosity LHC. Together with the Macro-Pixel ASIC (MPA) it will instrument modules containing a strip and a macro-pixel sensor stacked on top of each other. The SSA provides both full readout of the strip hit information when triggered, and, together with the MPA, correlated clusters called stubs from the two sensors for use by the CMS Level-1 (L1) trigger system. Results from the first prototype module consisting of a sensor and two SSA chips are presented. The prototype module has been characterized at the Fermilab Test Beam Facility using a 120 GeV proton beam.Peer reviewe

Quality assessment of cadmium telluride as a detector material for multispectral medical imaging

Cadmiumtelluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of CdTe as a detector material for multispectralmedical imaging, a research which is conducted as part of the Consortium Project Multispectral Photon-counting for Medical Imaging and Beam characterization (MPMIB). The aim of the project is to develop novel CdTe detectors and obtain spectrum-per-pixel information that make the distinction between different radiation types and tissues possible. To evaluate the defect density inside the crystals - which can deteriorate the detector performance - we employ infrared microscopy (IRM). Posterior data analysis allows us to visualise the defect distributions as 3D defect maps. Additionally, we investigate front and backside differences of the material with current-voltage (IV) measurements to determine the preferred surface for the pixelisation of the crystal, and perform test measurements with the prototypes to provide feedback for further processing. We present the different parts of our quality assessment chain and will close with first experimental results obtained with one of our prototype photon-counting detectors in a small tomographic setup.Peer reviewe

Characterization of magnetic Czochralski silicon devices with aluminium oxide field insulator : effect of oxygen precursor on electrical properties and radiation hardness

Aluminium oxide (Al2O3) has been proposed as an alternative to thermal silicon dioxide (SiO2) as field insulator and surface passivation for silicon detectors, where it could substitute p-stop/p-spray insulation implants between pixels due to its negative oxide charge, and enable capacitive coupling of segments by means of its higher dielectric constant. Al2O3 is commonly grown by atomic layer deposition (ALD), which allows the deposition of thin layers with excellent precision. In this work, we report the electrical characterization of single pad detectors (diodes) and MOS capacitors fabricated on magnetic Czochralski silicon substrates and using Al2O3 as field insulator. Devices are studied by capacitance-voltage, current-voltage, and transient current technique measurements. We evaluate the influence of the oxygen precursors in the ALD process, as well as the effect of gamma irradiation, on the properties of these devices. We observe that leakage currents in diodes before the onset of breakdown are low for all studied ALD processes. Charge collection as measured by transient current technique (TCT) is also independent of the choice of oxygen precursor. The Al2O3 films deposited with O-3 possess a higher negative oxide charge than films deposited by H2O, However, in diodes a higher oxide charge is linked to earlier breakdown, as has been predicted by simulation studies. A combination of H2O and O-3 precursors results in a good compromise between the beneficial properties provided by the respective individual precursors.Peer reviewe

Impact of GEM foil hole geometry on GEM detector gain

Detailed 3D imaging of Gas Electron Multiplier (GEM) foil hole geometry was realized. Scanning White Light Interferometry was used to examine six topological parameters of GEM foil holes from both sides of the foil. To study the effect of the hole geometry on detector gain, the ANSYS and Garfield ++ software were employed to simulate the GEM detector gain on the basis of SWLI data. In particular, the effective gain in a GEM foil with equally shaped holes was studied. The real GEM foil holes exhibited a 4% lower effective gain and 6% more electrons produced near the exit electrode of the GEM foil than the design anticipated. Our results indicate that the GEM foil hole geometry affects the gain performance of GEM detectors.Peer reviewe