Structural and Optical Properties of Nanocrystalline TiO2 with Multiwalled Carbon Nanotubes and Its Photovoltaic Studies Using Ru(II) Sensitizers

In this study, the in situ sol–gel method has been deployed to prepare the titanium dioxide/multiwalled carbon nanotubes (TiO2/MWCNTs) nanocomposite (NCs) powders with varying content of MWCNTs (0.01–1.0 wt %), to construct the dye-sensitized solar cells (DSSCs). First, binder-free NCs were deposited on a transparent-conducting F:SnO2 (FTO) glass substrate by a doctor-blade technique and then anchored with Ru(II)-based dyes to either N719 or ruthenium phthalocyanine (RuPc). The structural and optical properties and interconnectivity of the materials within the composite are investigated thoroughly by various spectral techniques (XRD, XPS, Raman, FT-IR, and UV–vis), electron microscopy (HRTEM), and BET analysis. The experimental results suggest that the ratio of MWCNTs and TiO2 in NCs, morphology, and their interconnectivity influenced their structural, optical, and photovoltaic properties significantly. Finally, the photovoltaic performances of the assembled DSSCs with different content of MWCNTs to TiO2 films anchored with two different dyes were tested under one sun irradiation (100 mW/cm2). The measured current–voltage (IV) curve and incident photon-to-current conversion efficiency (IPCE) spectra of TiO2/0.1 wt % MWCNTs ([email protected] C) for N719 dye show three times more power conversion efficiency (η = 6.21%) which is opposed to an efficiency (η = 2.07%) of [email protected] C for RuPc dye under the same operating conditions

Resistive Switching Characteristics of Electrochemically Anodized Sub-stoichiometric Ti6O Phase

We have developed Ti6O thin film using the electrochemical anodization approach for resistive switching (RS) application. The effect of anodization time (1 h, 2 h and 3 h) on the RS/memristive properties was investigated. The structural analysis was carried out by using the XRD technique, which reveals that the formation of the sub-stoichiometric Ti6O phase. The scanning electron microscopy image reveals that the thin film has compact and porous surface morphology. The electrical results clearly show bipolar RS in Al/Ti6O/Ti device. The boost in the RS properties was achieved by increasing the anodization time. The basic memristive properties were calculated using experimental I-V data. The Schottky, Hopping and Ohmic charge transport mechanisms contribute to the conduction, whereas the filamentary effect controls the RS process of the Al/Ti6O/Ti memristive devices

Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films

The Cu2O thin film was developed using an electrodeposition approach for resistive memory application. The impact of the deposition voltage (1V, 2V, 3V, and 4V) on resistive switching (RS)/memristive properties of Cu2O thin films was studied. The XRD spectrum reveals that deposited Cu2O has a cubic crystal structure. The bipolar RS in Al/Cu2O/FTO device was clearly observed during the current-voltage (I-V) measurement. The basic memristive properties were calculated from I-V data. The charge transport studies suggested that the SCLC mechanism was responsible for device conduction, and RS was due to filamentary effect. The result suggested that the electrodeposition technique is useful to fabricate a memristive device for various applications

Bipolar Resistive Switching Characteristics of Ex-situ Synthesized TiO2-ZnO Nanocomposite

In this present article, we have reported a simple and cost-effective ex-situ synthesis of TiO2-ZnO (TZ) nanocomposite thin film by utilizing sol-gel, hydrothermal and solid-state reaction methods. The Ag/TZ/FTO nanocomposite device was developed and demonstrated the bipolar resistive switching (RS) characteristics for resistive memory applications. The result of XRD analysis confirms that the nanocomposite has mixed tetragonal and hexagonal crystal structures of TiO2 and ZnO, respectively. The hysteresis loop is an essential criterion for recognizing memristive devices and similar characteristic was noticed for the developed nanocomposite device. Besides, basic memristive properties were calculated from the I-V data. The charge transportation of Ag/TZ/FTO nanocomposite device takes place because of Ohmic and space charge limited current. The collective effect of oxygen vacancies and Ag ions was a basis of RS effect in the Ag/TZ/FTO nanocomposite device

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO2 RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO2 based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices

Resistive Switching Property of Bmim(Br) Ionic Liquid under the Influence of ZnO Nanorods

The majority of the research work in the area of resistive switching has been carried out with the help of organic, inorganic and hybrid materials. Only a few reports investigate resistive switching properties of ionic liquid and soft materials. In this report, we have synthesized ZnO nanorods (NRs) and Bmim(Br) ionic liquid using simple and low-temperature chemical route i.e., hydrothermal and reflux method, respectively. The structural study of ZnO NRs indicates that the formation of hexagonal crystal structure, evident from the XRD pattern. The FESEM image suggested the formation of nanorods like morphology. The effect of dispersed ZnO NRs on the resistive switching behavior of Bmim(Br) ionic liquid was studied. The study explains the change in switching behavior by dispersing the different concentrations of ZnO NRs in ionic liquid. The results demonstrated that the dispersed ZnO NRs in ionic liquid plays a vital role and will be a potential active switching material for resistive switching applications

Bipolar resistive switching and memristive properties of hydrothermally synthesized TiO2 nanorod array: Effect of growth temperature

The final publication is available at Elsevier via https://dx.doi.org/10.1016/j.matdes.2018.04.046 © 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/In the present work, the hydrothermal approach is employed to develop 1D-TiO2 nanorod array memristive devices and the effect of hydrothermal growth temperature on TiO2 memristive devices is studied. X-ray diffraction (XRD) analysis suggested that the rutile phase is dominant in the developed TiO2 nanorod array. Field emission scanning electron microscopy (FESEM) images show well adherent and pinhole free one dimensional (1D) TiO2 nanorods. The presence of titanium and oxygen in all the samples was confirmed by energy dispersive X-ray spectroscopy (EDS). Furthermore, growth of the 1D TiO2 nanorods depends on the growth temperature and uniform growth is observed at the higher growth temperatures. The well-known memristive hysteresis loop is observed in the TiO2 nanorod thin films. Furthermore, resistive switching voltages, the shape of I-V loops and (non)rectifying behavior changed as the growth temperature varied from 140 °C to 170 °C. The biological synapse properties such as paired-pulse facilitation and short-term depression are observed in some devices. The detailed electrical characterizations suggested that the developed devices show doubled valued charge-magnetic flux characteristic and charge transportation is due to the Ohmic and space charge limited current.Funding from School of Nanoscience and Biotechnology, Shivaji University, Kolhapu

Harnessing VLSI System Design with EDA Tools

This book explores various dimensions of EDA technologies for achieving different goals in VLSI system design. Although the scope of EDA is very broad and comprises diversified hardware and software tools to accomplish different phases of VLSI system design, such as design, layout, simulation, testability, prototyping and implementation, this book focuses only on demystifying the code, a.k.a. firmware development and its implementation with FPGAs. Since there are a variety of languages for system design, this book covers various issues related to VHDL, Verilog and System C synergized with EDA tools, using a variety of case studies such as testability, verification and power consumption. * Covers aspects of VHDL, Verilog and Handel C in one text; * Enables designers to judge the appropriateness of each EDA tool for relevant applications; * Omits discussion of design platforms and focuses on design case studies; * Uses design case studies from diversified application domains such as network on chip, hospital on chip, analog to digital conversion and embedded system design; * Facilitates with code and tool flows the design cycle for systems on chip with increasing complexity; * Demonstrates standard development cycles, making use of latest concepts such as ‘Soft IP Cores’, ‘Hardware Software Codesign’ etc