4H-SiC P⁺N UV Photodiodes for Space Applications

International audienceSpectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral sensitivity of Al doped photodiodes increase for incident wavelength higher than 270 nm, and are very stable below. Boron doped irradiated photodiodes show a general increase of the photoresponse for all wavelengths. In both cases, an hysteresis effect is observable when with the temperature. Results are presented and discussed

sj-docx-1-nad-10.1177_14550725231183236 - Supplemental material for Translating and adapting the Alcohol Use Disorders Identification Test (AUDIT) for use in the Russian Federation: A multicentre pilot study to inform validation procedures

Supplemental material, sj-docx-1-nad-10.1177_14550725231183236 for Translating and adapting the Alcohol Use Disorders Identification Test (AUDIT) for use in the Russian Federation: A multicentre pilot study to inform validation procedures by Maria Neufeld, Anna Bunova, Eugenia Fadeeva, Alexey Nadezhdin, Elena Tetenova, Konstantin Vyshinsky, Carina Ferreira-Borges, Elena Yurasova, Andrey Allenov and Boris Gornyi in Nordic Studies on Alcohol and Drugs</p

sj-docx-2-nad-10.1177_14550725231183236 - Supplemental material for Translating and adapting the Alcohol Use Disorders Identification Test (AUDIT) for use in the Russian Federation: A multicentre pilot study to inform validation procedures

Supplemental material, sj-docx-2-nad-10.1177_14550725231183236 for Translating and adapting the Alcohol Use Disorders Identification Test (AUDIT) for use in the Russian Federation: A multicentre pilot study to inform validation procedures by Maria Neufeld, Anna Bunova, Eugenia Fadeeva, Alexey Nadezhdin, Elena Tetenova, Konstantin Vyshinsky, Carina Ferreira-Borges, Elena Yurasova, Andrey Allenov and Boris Gornyi in Nordic Studies on Alcohol and Drugs</p

RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders

The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration