Coherent control of nanomagnet dynamics via ultrafast spin torque pulses

The magnetization orientation of a nanoscale ferromagnet can be manipulated using an electric current via the spin transfer effect. Time domain measurements of nanopillar devices at low temperatures have directly shown that magnetization dynamics and reversal occur coherently over a timescale of nanoseconds. By adjusting the shape of a spin torque waveform over a timescale comparable to the free precession period (100-400 ps), control of the magnetization dynamics in nanopillar devices should be possible. Here we report coherent control of the free layer magnetization in nanopillar devices using a pair of current pulses as narrow as 30 ps with adjustable amplitudes and delay. We show that the switching probability can be tuned over a broad range by timing the current pulses with the underlying free-precession orbits, and that the magnetization evolution remains coherent for more than 1 ns even at room temperature. Furthermore, we can selectively induce transitions along free-precession orbits and thereby manipulate the free magnetic moment motion. We expect this technique will be adopted for further elucidating the dynamics and dissipation processes in nanomagnets, and will provide an alternative for spin torque driven spintronic devices, such as resonantly pumping microwave oscillators, and ultimately, for efficient reversal of memory bits in magnetic random access memory (MRAM).Comment: 4 pages, 3 figures, submitted to Nature Physic

Macrospin model of incubation delay due to the field-like spin transfer torque

We show that the absence of pre-switching oscillations ("incubation delay") in magnetic tunnel junctions can be explained within the macrospin model by a sizable field-like component of the spin-transfer torque. It is further suggested that measurements of the voltage dependence of tunnel junction switching time in the presence of external easy axis magnetic fields can be used to determine the magnitude and voltage dependence of the field-like torque.Comment: 4 pages, 4 figure

Macrospin model to explain the absence of preswitching oscillations in magnetic tunnel junctions: Fieldlike spin-transfer torque

We show that the absence of preswitching oscillations (“incubation delay”) in magnetic tunnel junctions can be explained within the macrospin model by a sizable fieldlike component of the spin-transfer torque. It is further suggested that measurements of the voltage dependence of tunnel junction switching time in the presence of external easy axis magnetic fields can be used to determine the magnitude and voltage dependence of the fieldlike torque

Spin transfer switching of spin valve nanopillars using nanosecond pulsed currents

Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 mA to 7.8 mA, and varied in duration within the range of 100 ps to 200 ns. The probability of device reversal is measured as a function of the pulse duration for each pulse amplitude. The reciprocal pulse duration required for 95% reversal probability is linearly related to the pulse current amplitude for currents exceeding 1.9 mA. For this device, 1.9 mA marks the crossover between dynamic reversal at larger currents and reversal by thermal activation for smaller currents

Effect of resistance feedback on spin torque-induced switching of nanomagnets

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of MTJ's, and show that magnetization switching is only affected by capacitive shunting in the pF range.Comment: 8 page

High-Speed Dynamics, Damping, and Relaxation Times in Submicrometer Spin-Valve Devices

The dynamical response of spin-valve devices with line widths of 0.8 m has been measured after excitation with 160 ps magnetic impulses. The devices show resonant frequencies of 2 to 4 GHz which determine the upper limit of their operation frequency. The dynamical response can be fit with LandauLifshitz models to extract an effective uniform-mode damping constant, a um . The measured values of a um were between 0.04 and 0.01 depending on the magnitude of the longitudinal bias field. The appropriate damping coefficient for use in micromagnetic modeling, amm , was extracted from the dynamical response with large longitudinal bias field. This value was used to model the switching of a 0.1 m x 1.0 m magnetoresistive random access memory (MRAM) cell. The micromagnetic model included shape disorder that is expected to be found in real devices. The simulations showed that, while the magnetization reverses rapidly (< 0.5 ns), it took several nanoseconds for the energy to be removed from the ma..