Combined model of non-conformal layer growth for accurate optical simulation of thin-film silicon solar cells

[EN] In thin-film silicon solar cells textured interfaces are introduced, leading to improved antireflection and light trapping capabilities of the devices. Thin-layers are deposited on surface-textured substrates or superstrates and the texture is translated to internal interfaces. For accurate optical modelling of the thin-film silicon solar cells it is important to define and include the morphology of textured interfaces as realistic as possible. In this paper we present a model of thin-layer growth on textured surfaces which combines two growth principles: conformal and isotropic one. With the model we can predict the morphology of subsequent internal interfaces in thin-film silicon solar cells based on the known morphology of the substrate or superstrate. Calibration of the model for different materials grown under certain conditions is done on various cross-sectional scanning electron microscopy images of realistic devices. Advantages over existing growth modelling approaches are demonstrated one of them is the ability of the model to predict and omit the textures with high possibility of defective regions formation inside the Si absorber layers. The developed model of layer growth is used in rigorous 3-D optical simulations employing the COMSOL simulator. A sinusoidal texture of the substrate is optimised for the case of a micromorph silicon solar cell. More than a 50 % increase in short-circuit current density of the bottom cell with respect to the flat case is predicted, considering the defect-free absorber layers. The developed approach enables accurate prediction and powerful design of current-matched top and bottom cell.The authors acknowledge the financial support from the European FP7 projects Silicon-Light (GA no. 2412777), the Integrated Infrastructure Initiative (312483-ESTEEM2) and the Slovenian Research Agency (P2-0197). The authors thank Christophe Ballif and Remi Biron from IMT EPFL, Neuchatel and Rafal E. Dunin-Borkowski from Institute for Microstructure Research, Research Centre Julich for their precious support to this work. M. Sever personally acknowledges the Slovenian Research Agency for providing PhD funding.Slovenian Research Agency (ARRS)Sever, M.; Lipovsek, B.; Krc, J.; Campa, A.; Sánchez Plaza, G.; Haug, F.; Duchamp, M.... (2013). Combined model of non-conformal layer growth for accurate optical simulation of thin-film silicon solar cells. Solar Energy Materials and Solar Cells. 119:59-66. https://doi.org/10.1016/j.solmat.2013.05.016S596611

Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

Preamorphization implant (PAT) prior to dopant implantation, followed by solid phase epitaxial regrowth (SPER) is of great interest due to its ability to form highly-activated ultrashallow junctions. Coupled with growing interest in the use of silicon-on-insulator (SOI) wafers, modeling and simulating the influence of SOI structure on damage evolution and ultra-shallow junction formation is required. In this work, we use a kinetic Monte Carlo (kMC) simulator to model the different mechanisms involved in the process of ultra-shallow junction formation, including amorphization, recrystallization, defect interaction and evolution, as well as dopant-defect interaction in both bulk silicon and SOI. Simulation results of dopant concentration profiles and dopant activation are in good agreement with experimental data and can provide important insight for optimizing the process in bulk silicon and SOI. © 2006 Materials Research Society

Design of advanced surface-textures for thin-film silicon micromorph solar cells

Improvements in short-circuit currents of micromprph solar cells are investigated, with respect of nano-imprinted textures to glass superstrate. 2-D U-like periodic textures are optimized by means of 3-D rigorous optical simulations. Simulations indicate potential for > 35 % improvements in JSCbot for the optimized U-like textures with high aspect ratio compared to state-of-the-art random textures

Over-expression of DSCR1 protects against post-ischemic neuronal injury

Background and Purpose: The Down syndrome candidate region 1 (DSCR1) gene is located on human chromosome 21 and its protein is over-expressed in brains of Down syndrome individuals. DSCR1 can modulate the activity of calcineurin, a phosphatase abundant in the brain, but its influence on stroke outcome is not clear. We compared stroke outcome in wildtype (WT) and transgenic (DSCR1-TG) mice which over-express isoform 1 of human DSCR1. Methods: Transient cerebral ischemia was produced by occlusion of the middle cerebral artery for 0.5 h. After 23.5 h reperfusion, we assessed neurological impairment, brain infarct and edema volume, leukocyte infiltration and markers of inflammation. Intrinsic resistance to apoptosis following glucose deprivation was also assessed in primary cultures of WT and DSCR1-TG neurons. Results: In contrast to WT, DSCR1-TG mice had an improved neurological deficit score, greater grip strength, attenuated infarct volume and brain swelling, and lacked hippocampal lesions after stroke. Expression of mouse DSCR1-1, but not DSCR1-4, mRNA and protein was increased by ischemia in both WT and DSCR1-TG. Brain calcineurin activity was increased to a similar degree after ischemia in each genotype. DSCR1-TG mice had fewer infiltrating neutrophils and activated microglia compared with WT, in association with an attenuated upregulation of several pro-inflammatory genes. Neurons from DSCR1-TG mice were more resistant than WT neurons to apoptotic cell death following 24 h of glucose deprivation. Conclusions: Over-expression of DSCR1 in mice improves outcome following stroke. Mechanisms underlying this protection may involve calcineurin-independent, anti-inflammatory and anti-apoptotic effects mediated by DSCR1 in neurons

TIC 172900988: A Transiting Circumbinary Planet Detected in One Sector of TESS Data

We report the first discovery of a transiting circumbinary planet detected from a single sector of Transiting Exoplanet Survey Satellite (TESS) data. During Sector 21, the planet TIC 172900988b transited the primary star and then five days later it transited the secondary star. The binary is itself eclipsing, with a period P ≈ 19.7 days and an eccentricity e ≈ 0.45. Archival data from ASAS-SN, Evryscope, KELT, and SuperWASP reveal a prominent apsidal motion of the binary orbit, caused by the dynamical interactions between the binary and the planet. A comprehensive photodynamical analysis of the TESS, archival and follow-up data yields stellar masses and radii of M1 = 1.2384 ±0.0007 M⊙ and R1 = 1.3827 ± 0.0016 R⊙ for the primary and M2 = 1.2019 ± 0.0007 M⊙ and R2 = 1.3124 ±0.0012 R⊙ for the secondary. The radius of the planet is R3 = 11.25 ± 0.44 R⊕ (1.004 ± 0.039RJup). The planet's mass and orbital properties are not uniquely determined—there are six solutions with nearly equal likelihood. Specifically, we find that the planet's mass is in the range of 824 ≲ M3 ≲ 981 M⊕ (2.65 ≲ M3 ≲ 3.09MJup), its orbital period could be 188.8, 190.4, 194.0, 199.0, 200.4, or 204.1 days, and the eccentricity is between 0.02 and 0.09. At V = 10.141 mag, the system is accessible for high-resolution spectroscopic observations, e.g., the Rossiter–McLaughlin effect and transit spectroscopy