Linear and nonlinear optical properties of trigonal borate crystals K7MIn2-xYbx(B5O10)3 (M = Ca, Sr, Ba; x=0…2) with isolated B5O10 units

Noncentrosymmetric borates K7MIn2−xYbx(B5O10)3 (M = Ca, Sr, Ba; x = 0…2) were synthesized by the solid state reaction and the crystals were successfully grown by the top seeded solution growth method using the K2O-B2O3-MF2 flux. According to Rietveld refinement, the crystal structure belongs to the noncentrosymmetric R32 space group. Also, the octahedrally coordinated In atoms are located at wide ranges ∼8 Å which may be promising for phosphor and laser applications. Samples with ytterbium show a characteristic emission band in the range of 950–1050 nm related to the 2F5/2 → 2F7/2 transition of Yb3+ ions that is commonly used for laser generation. IR, Raman and absorption spectra were obtained for the samples as well. The short cut edge of UV absorption, SHG intensity comparable with KDP and low concentration quenching of luminescence suggest that the K7MIn2−xYbx(B5O10)3 borates are promising self-frequency doubling materials

Investigation of SHG in new scandium borate with three cations by the Kurtz-Perry method

This work is dedicated to study the optical properties of scandium borates with the general formula RExPrySc2+z(BO3)4 (x + y + z = 2, RE = Nd, Sm, Tb, Tm, Yb), grown by the TSSG method. The structure, absorption and luminescence of these crystals have been investigated

Systematics of electronic and magnetic properties in the transition metal doped Sb2_2Te3_3 quantum anomalous Hall platform

The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (DFT) calculations with complementary experimental techniques, i.e., scanning tunneling microscopy (STM), resonant photoemission (resPES), and x-ray magnetic circular dichroism (XMCD), we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM-doped TIs. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb$_2$Te$_3$ display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity-dependent and can vary from in-plane to out-of-plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM-doped Sb$_2$Te$_3$ in the ferromagnetic state.Comment: 40 pages, 13 figure

Synthesis and growth of rare earth borates NaSrR(BO3)2 (R = Ho− Lu, Y, Sc)

NaSrR(BO3)2(R = Ho-Lu, Y, Sc) compounds were obtained for the first time. Their structures exhibit disordered positions of Sr2+and Na+ atoms while RO6polyhedra are connected through the BO3 groups. Large distances between R atoms and high transparency in the range of 250-900 nm make them promising for phosphor applications. A pathway to obtain single crystals was shown by growing NaSrY(BO3)2and NaSrYb-(BO3)2by the top seeded solution growth method with Na2O-B2O3-NaFflux

Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI

Narrow gap semiconductors with strong spin orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin polarized photocurrent

Geometric and electronic structure of the Cs-doped Bi2Se3(0001) surface

Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001) surface kept at room temperature. Two samples were investigated: a single Bi2Se3 crystal, whose surface was Ar sputtered and then annealed at ∼500∘C for several minutes prior to Cs deposition, and a 13-nm-thick epitaxial Bi2Se3 film that was not subject to sputtering and was annealed only at ∼350∘C. In the first case, a considerable fraction of Cs atoms occupy top layer Se atoms sites both on the terraces and along the upper step edges where they form one-dimensional-like structures parallel to the step. In the second case, Cs atoms occupy the fcc hollow site positions. First-principles calculations reveal that Cs atoms prefer to occupy Se positions on the Bi2Se3(0001) surface only if vacancies are present, which might be created during the crystal growth or during the surface preparation process. Otherwise, Cs atoms prefer to be located in fcc hollow sites in agreement with the experimental finding for the MBE-grown sample