Instability mechanisms in amorphous oxide semiconductors leading to a threshold voltage shift in thin film transistors

Amorphous indium gallium zinc oxide (a-IGZO) has been successfully employed commercially as the channel layer in thin film transistors (TFTs) for active-matrix flat panel displays. However, these TFTs are known to suffer from a threshold voltage shift upon application of a gate bias. The threshold voltage shift is reversible through annealing. A similar phenomenon is observed in other TFTs with an amorphous oxide semiconductor channel. The migration of oxygen vacancies is proposed as being the microscopic mechanism causing this effect as it can lead to a change in the equilibrium distribution of defect states in the band gap of the semiconductor. This would manifest itself as a reversible threshold voltage shift in the TFT transfer characteristics, as observed experimentally.The support of this work by the Engineering and Physical Sciences Research Council (EPSRC) through project EP/M013650/1 is acknowledged

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

Vanadium dioxide (VO2) thin films were deposited by atomic layer deposition (ALD) using a tetrakis(ethylmethylamino) vanadium precursor and an H2O oxidant at a temperature of 150 °C. Optimization of postdeposition annealing results in smooth, continuous VO2 films (thickness, t ∼ 30 nm) with small grains, exhibiting a transition from semiconducting to metal phase, typically known as the metal-insulator transition (MIT), at ∼72 °C with a switching ratio of ∼102. Such films were produced with high repeatability on a wafer scale and have been successfully utilized in resistively coupled oscillators and self-selected resistive devices. Under a smaller process window, thin films (t ∼ 30 nm) with very large grains have also been produced, exhibiting the MIT ratio of ∼103, which is the highest achieved for the ALD VO2 films deposited on SiO2 substrates. Both types of films were characterized again after 120 days to access their stability in air, a property that was rarely investigated.</jats:p

Effects of post-deposition vacuum annealing on film characteristics of p-type Cu2_{2}O and its impact on thin film transistor characteristics

Annealing of cuprous oxide (Cu$_{2}$O) thin films in vacuum without phase conversion for subsequent inclusion as the channel layer in p-type thin film transistors (TFTs) has been demonstrated. This is based on a systematic study of vacuum annealing effects on the sputtered p-type Cu$_{2}$O as well as the performance of TFTs on the basis of the crystallographic, optical, and electrical characteristics. It was previously believed that high-temperature annealing of Cu$_{2}$O thin films would lead to phase conversion. In this work, it was observed that an increase in vacuum annealing temperature leads to an improvement in film crystallinity and a reduction in band tail states based on the X-ray diffraction patterns and a reduction in the Urbach tail, respectively. This gave rise to a considerable increase in the Hall mobility from 0.14 cm$^{2}$/V·s of an as-deposited film to 28 cm$^{2}$/V·s. It was also observed that intrinsic carrier density reduces significantly from 1.8 × 1016 to 1.7 × 10$^{13}$ cm$^{-3}$ as annealing temperature increases. It was found that the TFT performance enhanced significantly, resulting from the improvement in the film quality of the Cu$_{2}$O active layer: enhancement in the field-effect mobility and the on/off current ratio, and a reduction in the off-state current. Finally, the bottom-gate staggered p-type TFTs using Cu$_{2}$O annealed at 700 °C showed a field-effect mobility of ∼0.9 cm$^{2}$/V·s and an on/off current ratio of ∼3.4 × 102.This work was supported by the Engineering and Physical Sciences Research Council under Grant No. EP/M013650/1. G.R. acknowledges the support of the Cambridge Trusts

Air Stable Indium-Gallium-Zinc-Oxide Diodes with a 6.4 GHz Extrinsic Cutoff Frequency Fabricated Using Adhesion Lithography

High speed rectifiers that can be fabricated at low cost whilst still maintaining a high performance are of interest for wireless communication applications. In this letter amorphous indium gallium zinc oxide (a-IGZO) has been used with adhesion lithography (a technique to create asymmetric planar electrodes separated by a nanogap) to fabricate high performance Schottky diode rectifiers. The diode area and junction capacitance can be significantly reduced using this technique, improving device cut-off frequencies. Devices of different widths have been fabricated showing rectification ratios between 103-104. Capacitances measured for devices of various sizes were all on the order of 0.1 pF. By applying ac signals to the diode and measuring the output voltage across a load resistor a cut-off frequency was found. a IGZO diodes with an extrinsic cut-off frequency of 6.4 GHz at a 15 dBM input power have been realized. The devices also show good air stability with little change in current-voltage characteristics after 12 months

Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

The influence of the stoichiometry of amorphous zinc tin oxide (a-ZTO) thin films used as the semiconducting channel in thin film transistors (TFTs) is investigated. A-ZTO has been deposited using remote-plasma reactive sputtering from zinc:tin metal alloy targets with 10%, 33%, and 50% Sn at. %. Optimisations of thin films are performed by varying the oxygen flow, which is used as the reactive gas. The structural, optical, and electrical properties are investigated for the optimised films, which, after a post-deposition annealing at 500 °C in air, are also incorporated as the channel layer in TFTs. The optical band gap of a-ZTO films slightly increases from 3.5 to 3.8 eV with increasing tin content, with an average transmission ∼90% in the visible range. The surface roughness and crystallographic properties of the films are very similar before and after annealing. An a-ZTO TFT produced from the 10% Sn target shows a threshold voltage of 8 V, a switching ratio of 10$^8$, a sub-threshold slope of 0.55 V dec$^{-1}$, and a field effect mobility of 15 cm$^2$ V$^{-1}$ s$^{-1}$, which is a sharp increase from 0.8 cm$^2$ V$^{-1}$ s$^{-1}$ obtained in a reference ZnO TFT. For TFTs produced from the 33% Sn target, the mobility is further increased to 21 cm$^2$ V$^{-1}$ s$^{-1}$, but the sub-threshold slope is slightly deteriorated to 0.65 V dec$^{-1}$. For TFTs produced from the 50% Sn target, the devices can no longer be switched off (i.e., there is no channel depletion). The effect of tin content on the TFT electrical performance is explained in the light of preferential sputtering encountered in reactive sputtering, which resulted in films sputtered from 10% and 33% Sn to be stoichiometrically close to the common Zn$_2$SnO$_4$ and ZnSnO$_3$ phases.Engineering and Physical Sciences Research Council (Grant ID: EP/M013650/1

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s−1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.The research leading to these results has received funding from the European Community’s 7th Framework Programme under grant agreement NMP3-LA-2010-246334. Financial support of the European Commission is therefore gratefully acknowledged. The work has also received funding from FEDER through the COMPETE 2020 Programme and National Funds through FCT–Portuguese Foundation for Science and Technology under the Project No. UID/CTM/50025/2013.This is the author accepted manuscript. The final version is available from AIP Publishing via http://dx.doi.org/10.1063/1.494324

Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures

Amorphous zinc tin oxides (a-ZTO), which are stoichiometrically close to the Zn$_2$SnO$_4$ and ZnSnO$_3$ phases, have been deposited using remote-plasma reactive sputtering, and incorporated as the channel layers in thin film transistors (TFTs). The influence of tin composition and annealing temperatures on the structural and phase evolutions of the thin films, and the electrical performances of the TFTs are investigated. Zn$_2$SnO$_4$ exhibited randomly oriented polycrystalline peaks at annealing temperatures ≥700 °C, while ZnSnO$_3$ decomposed into Zn$_2$SnO$_4$ and SnO$_2$ at 950 °C. TFTs employing a Zn$_2$SnO$_4$ channel, after a post-deposition annealing at 500 °C, exhibited a field effect mobility ~14 cm$^2$ V$^{−1}$ s$^{−1}$ and a sub-threshold slope ~0.6 V dec$^{−1}$. When the tin content was increased in the channel, as in ZnSnO$_3$, TFTs exhibited an increase in field effect mobility ~20 cm$^2$ V$^{−1}$ s$^{−1}$, but with a slight deterioration of sub-threshold slope to ~0.8 V dec$^{−1}$. When the post-deposition annealing temperature was reduced to 300 °C, a mobility as high as ~10 cm$^2$ V$^{−1}$ s$^{−1}$ was still achieved, however, a significant shoulder in the IDS–VGS curve, together with a higher off-state current was observed. TFT characteristics are explained by the sub-bandgap defect states measured by photothermal deflection spectroscopy and the extracted Urbach energies.The support of this work by the Engineering and Physical Sciences Research Council (EPSRC) through project EP/M013650/1 is acknowledged. A.S. and R.H.F. would like to acknowledge funding and active support from EPSRC and India-UK APEX project. K.M.N. thanks Dr. S. Thornley of PlasmaQuest for providing the metallic tin target

Combined Inflammatory and Metabolic Defects Reflected by Reduced Serum Protein Levels in Patients with Buruli Ulcer Disease

Buruli ulcer is a skin disease caused by Mycobacterium ulcerans that is spreading in tropical countries, with major public health and economic implications in West Africa. Multi-analyte profiling of serum proteins in patients and endemic controls revealed that Buruli ulcer disease down-regulates the circulating levels of a large array of inflammatory mediators, without impacting on the leukocyte composition of peripheral blood. Notably, several proteins contributing to acute phase reaction, lipid metabolism, coagulation and tissue remodelling were also impacted. Their down-regulation was selective and persisted after the elimination of bacteria with antibiotic therapy. It involved proteins with various functions and origins, suggesting that M. ulcerans infection causes global and chronic defects in the host’s protein metabolism. Accordingly, patients had reduced levels of total serum proteins and blood urea, in the absence of signs of malnutrition, or functional failure of liver or kidney. Interestingly, slow healers had deeper metabolic and coagulation defects at the start of antibiotic therapy. In addition to providing novel insight into Buruli ulcer pathogenesis, our study therefore identifies a unique proteomic signature for this disease

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO