Signatures of photon localization

Signatures of photon localization are observed in a constellation of transport phenomena which reflect the transition from diffusive to localized waves. The dimensionless conductance, g, and the ratio of the typical spectral width and spacing of quasimodes, \delta, are key indicators of electronic and classical wave localization when inelastic processes are absent. However, these can no longer serve as localization parameters in absorbing samples since the affect of absorption depends upon the length of the trajectories of partial waves traversing the sample, which are superposed to create the scattered field. A robust determination of localization in the presence of absorption is found, however, in steady-state measurements of the statistics of radiation transmitted through random samples. This is captured in a single parameter, the variance of the total transmission normalized to its ensemble average value, which is equal to the degree of intensity correlation of the transmitted wave, \kappa. The intertwined effects of localization and absorption can also be disentangled in the time domain since all waves emerging from the sample at a fixed time delay from an exciting pulse, t, are suppressed equally by absorption. As a result, the relative weights of partial waves emerging from the sample, and hence the statistics of intensity fluctuations and correlation, and the suppression of propagation by weak localization are not changed by absorption, and manifest the growing impact of weak localization with t.Comment: RevTex 16 pages, 12 figures; to appear in special issue of J. Phys. A on quantum chaotic scatterin

UTA versus line emission for EUVL: Studies on xenon emission at the NIST EBIT

Spectra from xenon ions have been recorded at the NIST EBIT and the emission into a 2% bandwidth at 13.5 nm arising from 4d-5p transitions compared with that from 4d-4f and 4p-4d transitions in Xe XI and also with that obtained from the unresolved transition array (UTA) observed to peak just below 11 nm. It was found that an improvement of a factor of five could be gained in photon yield using the UTA rather than the 4d-5p emission. The results are compared with atomic structure calculations and imply that a significant gain in efficiency should be obtained using tin, in which the emission at 13.5 nm comes from a similar UTA, rather than xenon as an EUVL source material

High-Power Plasma Discharge Source At 13.5 Nm And 11.4 Nm For Euv Lithography

An intense pulsed capillary discharge source operating at 13.5 nm and 11.4 nm, suitable for use in conjunction with Mo:Si or Mo:Be coated optics, has produced an average power of approximately 1.4 W within a 0.3 nm emission bandwidth from the end of the capillary when operated at a repetition rate of 100 Hz. The source is comprised of a small capillary discharge tube filled with xenon gas at low pressure to which electrodes are attached at each end. When a voltage is applied across the tube, an electrical current is generated for short periods within the capillary that produces highly ionized xenon ions radiating in the EUV. Issues associated with plasma bore erosion are currently being addressed from the standpoint of developing such a source for operation at repetition rates of greater than 1 kHz