Statistics of voltage fluctuations in resistively shunted Josephson junctions

The intrinsic nonlinearity of Josephson junctions converts Gaussian current noise in the input into non-Gaussian voltage noise in the output. For a resistively shunted Josephson junction with white input noise we determine numerically exactly the properties of the few lowest cumulants of the voltage fluctuations, and we derive analytical expressions for these cumulants in several important limits. The statistics of the voltage fluctuations is found to be Gaussian at bias currents well above the Josephson critical current, but Poissonian at currents below the critical value. In the transition region close to the critical current the higher-order cumulants oscillate and the voltage noise is strongly non-Gaussian. For coloured input noise we determine the third cumulant of the voltage.Comment: 9 pages, 5 figure

Full counting statistics of information content

We review connections between the cumulant generating function of full counting statistics of particle number and the R\'enyi entanglement entropy. We calculate these quantities based on the fermionic and bosonic path-integral defined on multiple Keldysh contours. We relate the R\'enyi entropy with the information generating function, from which the probability distribution function of self-information is obtained in the nonequilibrium steady state. By exploiting the distribution, we analyze the information content carried by a single bosonic particle through a narrow-band quantum communication channel. The ratio of the self-information content to the number of bosons fluctuates. For a small boson occupation number, the average and the fluctuation of the ratio are enhanced.Comment: 16 pages, 5 figure

Irreversibility on the Level of Single-Electron Tunneling

We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the source-drain bias by using time-resolved charge detection with a quantum point contact. We find that these trajectories appear with a frequency that agrees with the theoretical predictions even under strong nonequilibrium conditions, when the finite bandwidth of the charge detection is taken into account

Full counting statistics for transport through a molecular quantum dot magnet

Full counting statistics (FCS) for the transport through a molecular quantum dot magnet is studied theoretically in the incoherent tunneling regime. We consider a model describing a single-level quantum dot, magnetically coupled to an additional local spin, the latter representing the total molecular spin s. We also assume that the system is in the strong Coulomb blockade regime, i.e., double occupancy on the dot is forbidden. The master equation approach to FCS introduced in Ref. [12] is applied to derive a generating function yielding the FCS of charge and current. In the master equation approach, Clebsch-Gordan coefficients appear in the transition probabilities, whereas the derivation of generating function reduces to solving the eigenvalue problem of a modified master equation with counting fields. To be more specific, one needs only the eigenstate which collapses smoothly to the zero-eigenvalue stationary state in the limit of vanishing counting fields. We discovered that in our problem with arbitrary spin s, some quartic relations among Clebsch-Gordan coefficients allow us to identify the desired eigenspace without solving the whole problem. Thus we find analytically the FCS generating function in the following two cases: i) both spin sectors lying in the bias window, ii) only one of such spin sectors lying in the bias window. Based on the obtained analytic expressions, we also developed a numerical analysis in order to perform a similar contour-plot of the joint charge-current distribution function, which have recently been introduced in Ref. [13], here in the case of molecular quantum dot magnet problem.Comment: 17 pages, 5 figure

Contiguous 3d and 4f magnetism: towards strongly correlated 3d electrons in YbFe2Al10

We present magnetization, specific heat, and 27Al NMR investigations on YbFe2Al10 over a wide range in temperature and magnetic field. The magnetic susceptibility at low temperatures is strongly enhanced at weak magnetic fields, accompanied by a ln(T0/T) divergence of the low-T specific heat coefficient in zero field, which indicates a ground state of correlated electrons. From our hard X-ray photo emission spectroscopy (HAXPES) study, the Yb valence at 50 K is evaluated to be 2.38. The system displays valence fluctuating behavior in the low to intermediate temperature range, whereas above 400 K, Yb3+ carries a full and stable moment, and Fe carries a moment of about 3.1 mB. The enhanced value of the Sommerfeld Wilson ratio and the dynamic scaling of spin-lattice relaxation rate divided by T [27(1/T1T)] with static susceptibility suggests admixed ferromagnetic correlations. 27(1/T1T) simultaneously tracks the valence fluctuations from the 4f -Yb ions in the high temperature range and field dependent antiferromagnetic correlations among partially Kondo screened Fe 3d moments at low temperature, the latter evolve out of an Yb 4f admixed conduction band.Comment: To appear in Phys. Rev. Let

Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance

We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.Comment: 4 pages, 1 figur

Energy Dissipation and Fluctuation-Response in Driven Quantum Langevin Dynamics

Energy dissipation in a nonequilibrium steady state is studied in driven quantum Langevin systems. We study energy dissipation flow to thermal environment, and obtain a general formula for the average rate of energy dissipation using an autocorrelation function for the system variable. This leads to a general expression of the equality that connects the violation of the fluctuation-response relation to the rate of energy dissipation, the classical version of which was first studied by Harada and Sasa. We also point out that the expression depends on coupling form between system and reservoir.Comment: 4 pages, 1 figur

Bulk and surface electronic properties of SmB6: a hard x-ray photoelectron spectroscopy study

We have carried out bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) measurements on in-situ cleaved and ex-situ polished SmB6 single crystals. Using the multiplet-structure in the Sm 3d core level spectra, we determined reliably that the valence of Sm in bulk SmB6 is close to 2.55 at ~5 K. Temperature dependent measurements revealed that the Sm valence gradually increases to 2.64 at 300 K. From a detailed line shape analysis we can clearly observe that not only the J=0 but also the J=1 state of the Sm 4f 6 configuration becomes occupied at elevated temperatures. Making use of the polarization dependence, we were able to identify and extract the Sm 4f spectral weight of the bulk material. Finally, we revealed that the oxidized or chemically damaged surface region of the ex-situ polished SmB6 single crystal is surprisingly thin, about 1 nm only.Comment: 11 pages, 8 figure

Aharonov-Bohm Effect for Parallel and T-shaped Double Quantum Dots

We investigate the Aharonov-Bohm (AB) effect for the double quantum dots in the Kondo regime using the slave-boson mean-field approximation. In contrast to the non-interacting case, where the AB oscillation generally has the period of 4$\pi$ when the two-subring structure is formed via the interdot tunneling $t_c$, we find that the AB oscillation has the period of 2$\pi$ in the Kondo regime. Such effects appear for the double quantum dots close to the T-shaped geometry even in the charge-fluctuation regime. These results follow from the fact that the Kondo resonance is always fixed to the Fermi level irrespective of the detailed structure of the bare dot-levels.Comment: 3 pages, 4 figures; minor change