106 research outputs found
Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors
In this article, we combine the modified electrostatics of a one-dimensional
transistor structure with a quantum kinetic formulation of Coulomb interaction
and nonequilibrium transport. A multi-configurational self-consistent Green's
function approach is presented, accounting for fluctuating electron numbers. On
this basis we provide a theory for the simulation of electronic transport and
quantum charging effects in nano-transistors, such as gated carbon nanotube and
whisker devices and one-dimensional CMOS transistors. Single-electron charging
effects arise naturally as a consequence of the Coulomb repulsion within the
channel
Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
With the help of a multi-configurational Green's function approach we
simulate single-electron Coulomb charging effects in gated ultimately scaled
nanostructures which are beyond the scope of a selfconsistent mean-field
description. From the simulated Coulomb-blockade characteristics we derive
effective system capacitances and demonstrate how quantum confinement effects
give rise to corrections. Such deviations are crucial for the interpretation of
experimentally determined capacitances and the extraction of
application-relevant system parameters
On the "Mandelbrot set" for a pair of linear maps and complex Bernoulli convolutions
We consider the "Mandelbrot set" for pairs of complex linear maps,
introduced by Barnsley and Harrington in 1985 and studied by Bousch, Bandt and
others. It is defined as the set of parameters in the unit disk such
that the attractor of the IFS is
connected. We show that a non-trivial portion of near the imaginary axis is
contained in the closure of its interior (it is conjectured that all non-real
points of are in the closure of the set of interior points of ). Next we
turn to the attractors themselves and to natural measures
supported on them. These measures are the complex analogs of
much-studied infinite Bernoulli convolutions. Extending the results of Erd\"os
and Garsia, we demonstrate how certain classes of complex algebraic integers
give rise to singular and absolutely continuous measures . Next we
investigate the Hausdorff dimension and measure of , for
in the set , for Lebesgue-a.e. . We also obtain partial results on
the absolute continuity of for a.e. of modulus greater
than .Comment: 22 pages, 5 figure
Multivariate p-dic L-function
We construct multivariate p-adic L-function in the p-adic number fild by
using Washington method.Comment: 9 page
Microscopic Surface Structure of Liquid Alkali Metals
We report an x-ray scattering study of the microscopic structure of the
surface of a liquid alkali metal. The bulk liquid structure factor of the
eutectic K67Na33 alloy is characteristic of an ideal mixture, and so shares the
properties of an elemental liquid alkali metal. Analysis of off-specular
diffuse scattering and specular x-ray reflectivity shows that the surface
roughness of the K-Na alloy follows simple capillary wave behavior with a
surface structure factor indicative of surface induced layering. Comparison of
thelow-angle tail of the K67Na33 surface structure factor with the one measured
for liquid Ga and In previously suggests that layering is less pronounced in
alkali metals. Controlled exposure of the liquid to H2 and O2 gas does not
affect the surface structure, indicating that oxide and hydride are not stable
at the liquid surface under these experimental conditions.Comment: 12 pages, 3 figures, published in Phys. Rev.
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It is found that the voltage position of an additional resonant peak shifts to lower bias voltage with increasing both incident light intensity and temperature. Our experimental data and theoretical simulations show that this shift is a result of an electrical field redistribution in the region of the p-n junction caused by non-equilibrium carriers generated with optic or thermal excitation
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