Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation

Formation and spatial ordering of self-induced GaN nanowires grown by molecular beam epitaxy on a spatially pre-nitridazed Si(111) substrate have been studied. It was found the close correlation between Si substrate nitridation parameters and crystallographic alignment of NWs. Conditions for NWs nucleation and in- plane orientation are predefined by a structural anisotropy of silicon nitride nanolayer. Mechanism of NWs orderly emergence suggested. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3540

Rapidly driven nanoparticles: Mean first-passage times and relaxation of the magnetic moment

We present an analytical method of calculating the mean first-passage times (MFPTs) for the magnetic moment of a uniaxial nanoparticle which is driven by a rapidly rotating, circularly polarized magnetic field and interacts with a heat bath. The method is based on the solution of the equation for the MFPT derived from the two-dimensional backward Fokker-Planck equation in the rotating frame. We solve these equations in the high-frequency limit and perform precise, numerical simulations which verify the analytical findings. The results are used for the description of the rates of escape from the metastable domains which in turn determine the magnetic relaxation dynamics. A main finding is that the presence of a rotating field can cause a drastic decrease of the relaxation time and a strong magnetization of the nanoparticle system. The resulting stationary magnetization along the direction of the easy axis is compared with the mean magnetization following from the stationary solution of the Fokker-Planck equation.Comment: 24 pages, 4 figure

Debye formulas for a relaxing system with memory

Rate (master) equations are ubiquitous in statistical physics, yet, to the best of our knowledge, a rate equation with memory has previously never been considered. We write down an integro-differential rate equation for the evolution of a thermally relaxing system with memory. For concreteness we adopt as a model a single-domain magnetic particle driven by a small ac field and derive the modified Debye formulas. For any memory time Θ the in-phase component of the resultant ac susceptibility is positive at small probing frequencies ω, but becomes negative at large ω. The system thus exhibits frequency induced diamagnetism. For comparison we also consider particle pairs with dipolar coupling. The memory effect is found to be enhanced by ferromagnetic coupling and suppressed by antiferromagnetic coupling. Numerical calculations support the prediction of a negative susceptibility which arises from a phase shift induced by the memory effect. It is proposed that the onset of frequency induced diamagnetism represents a viable experimental signature of correlated noise

Photoluminescence Dynamics of GaN/Si Nanowires

In this work we present analysis of carriers dynamics in samples of GaN nanowires grown on silicon. The samples exhibit bright luminescence of bulk donor-bound excitons at 3.472 eV, surface defect-bound excitons at 3.450 eV (SDX) and a broad (0.05 eV) band centered at 3.47 eV caused probably by single free exciton and bi-exciton recombination. The SDX emission has long lifetime τ = 0.6 ns at 4 K and can be observed up to 50 K. At higher temperatures luminescence is dominated by free excitons. The broad excitonic band is best visible under high excitation, and reveals fast, non-exponential dynamics. We present mathematical model assuming exciton-exciton interaction leading to the Auger processes. The model includes $n^2$ (Langevin) term and describes well the non-exponential dynamics of the excitonic band

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented

Magnetic and magnetocaloric properties of the high-temperature modification of TbTiGe

The high-temperature form (HT) of the ternary germanide TbTiGe was prepared by melting. The investigation of HT-TbTiGe by x-ray and neutron powder diffractions shows that the compound crystallizes in the tetragonal CeScSi-type structure (space group I4/mmm; a = 404.84(5) and c = 1530.10(9) pm as unit cell parameters). Magnetization and specific heat measurements as well as neutron powder diffraction performed on HT-TbTiGe reveal a ferromagnet having TC = 300(1) K as the Curie temperature; the Tb-moments are aligned along the c-axis. This magnetic ordering is associated with a modest magnetocaloric effect around room temperature. The isothermal magnetic entropy change ΔSm was determined from the magnetization data; ΔSm reaches, respectively, a maximum value of − 4.3 and − 2.0 J K−1 kg−1 for a magnetic field change of 5 and 2 T