Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for shallow donors. Further, we probe electrical transport across Schottky interfaces of Au on TiO$_2$ terminated n-type SrTiO$_3$. Quantitative analysis of macroscopic I-V measurements reveal thermionic emission dominated transport for the low doped substrate whereas it deviates from such behavior for the high doped substrate. This work is relevant for designing devices to study electronic transport using oxide-semiconductors.Comment: 10 Pages, 3 Figure

The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate

The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along ?110? direction

Relative effects on global warming of halogenated methanes and ethanes of social and industrial interest

The relative potential global warming effects for several halocarbons (chlorofluorocarbons (CFC's)-11, 12, 113, 114, and 115; hydrochlorofluorocarbons (HCFC's) 22, 123, 124, 141b, and 142b; and hydrofluorocarbons (HFC's) 125, 134a, 143a, and 152a; carbon tetrachloride; and methyl chloroform) were calculated by two atmospheric modeling groups. These calculations were based on atmospheric chemistry and radiative convective models to determine the chemical profiles and the radiative processes. The resulting relative greenhouse warming when normalized to the effect of CFC-11 agree reasonably well as long as we account for differences between modeled lifetimes. Differences among results are discussed. Sensitivity of relative warming values is determined with respect to trace gas levels assumed. Transient relative global warming effects are analyzed

Unification of bulk and interface electroresistive switching in oxide systems

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.Comment: 4 pages, 3 figures, accepted in PR

Magnetotransport in a two-dimensional electron system in dc electric fields

We report on nonequilibrium transport measurements in a high-mobility two-dimensional electron system subject to weak magnetic field and dc excitation. Detailed study of dc-induced magneto-oscillations, first observed by Yang {\em et al}., reveals a resonant condition that is qualitatively different from that reported earlier. In addition, we observe dramatic reduction of resistance induced by a weak dc field in the regime of separated Landau levels. These results demonstrate similarity of transport phenomena in dc-driven and microwave-driven systems and have important implications for ongoing experimental search for predicted quenching of microwave-induced zero-resistance states by a dc current.Comment: Revised version, to appear in Phys. Rev.

The Helicopter Antenna Radiation Prediction Code (HARP)

The first nine months effort in the development of a user oriented computer code, referred to as the HARP code, for analyzing the radiation from helicopter antennas is described. The HARP code uses modern computer graphics to aid in the description and display of the helicopter geometry. At low frequencies the helicopter is modeled by polygonal plates, and the method of moments is used to compute the desired patterns. At high frequencies the helicopter is modeled by a composite ellipsoid and flat plates, and computations are made using the geometrical theory of diffraction. The HARP code will provide a user friendly interface, employing modern computer graphics, to aid the user to describe the helicopter geometry, select the method of computation, construct the desired high or low frequency model, and display the results

Simulation of Internal Undular Bores Propagating over a Slowly Varying Region

Internal undular bores have been observed in many parts of the world. Studies have shown that many marine structures face danger and risk of destruction caused by internal undular bores due to the amount of energy it carries. This paper looks at the transformation of internal undular bore in two-layer fluid flow under the influence of variable topography. Thus, the surface of the bottom is considered to be slowly varying. The appropriate mathematical model is the variable-coefficient extended Korteweg-de Vries equation. We are particularly interested in looking at the transformation of KdV-type and table-top undular bore over the variable topography region. The governing equation is solved numerically using the method of lines, where the spatial derivatives are first discretised using finite difference approximation so that the partial differential equation becomes a system of ordinary differential equations which is then solved by 4th order Runge-Kutta method. Our numerical results show that the evolution of internal undular bore over different types of varying depths regions leads to a number of adiabatic and non-adiabatic effects. When the depth decreases slowly, a solitary wavetrain is observed at the front of the transformed internal undular bore. On the other hand, when the depth increases slowly, we observe the generation of step-like wave and weakly nonlinear trailing wavetrain, the occurrence of multi-phase behaviour, the generation of transformed undular bore of negative polarity and diminishing transformed undular bore depending on the nature of the topography after the variable topography

Intrinsic charge transport on the surface of organic semiconductors

The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The anisotropy of mu vanishes in the activation regime at lower temperatures, where the charge transport becomes dominated by shallow traps. The deep traps, deliberately introduced into the crystal by X-ray radiation, increase the field-effect threshold without affecting the mobility. These traps filled above the field-effect threshold do not scatter the mobile polaronic carriers.Comment: 10 pages, 4 figure

Space-charge mechanism of aging in ferroelectrics: an exactly solvable two-dimensional model

A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol%; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.Comment: 8 pages, 4 figures. accepted to Physical Review

Nonequilibrium Green's-Function Approach to the Suppression of Rectification at Metal--Mott-Insulator Interfaces

Suppression of rectification at metal--Mott-insulator interfaces, which is previously shown by numerical solutions to the time-dependent Schr\"odinger equation and experiments on real devices, is reinvestigated theoretically by nonequilibrium Green's functions. The one-dimensional Hubbard model is used for a Mott insulator. The effects of attached metallic electrodes are incorporated into the self-energy. A scalar potential originating from work-function differences and satisfying the Poisson equation is added to the model. For the electron density, we decompose it into three parts. One is obtained by integrating the local density of states over energy to the midpoint of the electrodes' chemical potentials. The others, obtained by integrating lesser Green's functions, are due to the couplings with the electrodes and correspond to an inflow and an outflow of electrons. In Mott insulators, incoming electrons and holes are extended over the whole system, avoiding further accumulation of charge relative to the case without bias. This induces collective charge transport and results in the suppression of rectification.Comment: 18 pages, Figs. 1(b), 2, and 8 replaced. Corrected typo