Quantum effects in linear and non-linear transport of T-shaped ballistic junction

We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regime the voltage of floating electrode always increases as a function of push-pull polarization. Such anomalous effect occurs for the symmetric device, provided the applied voltage is less than the Fermi energy in equilibrium

Influence of exciton spin relaxation on the photoluminescence spectra of semimagnetic quantum dots

We present a comprehensive experimental and theoretical studies of photoluminescence of single CdMnTe quantum dots with Mn content x ranging from 0.01 to 0.2. We distinguish three stages of the equilibration of the exciton-Mn ion spin system and show that the intermediate stage, in which the exciton spin is relaxed, while the total equilibrium is not attained, gives rise to a specific asymmetric shape of the photoluminescence spectrum. From an excellent agreement between the measured and calculated spectra we are able to evaluate the exciton localization volume, number of paramagnetic Mn ions, and their temperature for each particular dot. We discuss the values of these parameters and compare them with results of other experiments. Furthermore, we analyze the dependence of average Zeeman shifts and transition linewidths on the Mn content and point out specific processes, which control these values at particular Mn concentrations.Comment: submitted to Phys. Rev.

Temperature dependences of surface magnetoelastic constants of ultrathin Fe/GaAs (001) films

The magnetoelastic constants of epitaxial iron films prepared by dc magnetron sputtering on single crystal GaAs (001) substrate in argon atmosphere and covered with a protective Si layer have been investigated in the temperature range 10–300 K by means of the strain modulated ferromagnetic resonance. It has been shown that the magnetoelastic constants strongly depend on the thickness of the film. The surface components of the magnetoelastic constants have been determined and analyzed within the Néel and dipolar models. The proposed analysis of experimental data gives chance for deeper insight into mechanisms responsible for magnetostriction of iron thin films

New fabrication approach to ZnO multiple nanofiber sensors

In the presented work, ZnO nanofiber sensor structures designed and fabricated using a standard microelectronic device technology were studied. The structures in the configuration of a resistor with chemically active ZnO multiple nanofibers deposited by electrospinning method were prepared. Investigation of inclusion in the process reactive- ly sputtered AlN insulating film to improve the robustness of the nanofibres on the substrate was undertaken. Selective wet chemical etching of AlN film using photoresist developers and a photoresist mask to define the sensor active area was studied. The Ti/Au ohmic contacts were fabricated using the lift-off photolithography process. To- pography of the sensor structure details was investigated using AFM. Electrical charac- terization by means of I-V measurements was made. Sensitivity to the physiologically relevant concentration of Bovine Serum Albumin in water solution was shown. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2058