Atmospheric refraction effects on baseline error in satellite laser ranging systems

Because of the mathematical complexities involved in exact analyses of baseline errors, it is not easy to isolate atmospheric refraction effects; however, by making certain simplifying assumptions about the ranging system geometry, relatively simple expressions can be derived which relate the baseline errors directly to the refraction errors. The results indicate that even in the absence of other errors, the baseline error for intercontinental baselines can be more than an order of magnitude larger than the refraction error

Stress-Induced Delamination Of Through Silicon Via Structures

Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effect of thermal stresses on interfacial reliability of TSV structures. First, the three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results obtained by finite element analysis (FEA). Results from the stress analysis suggest interfacial delamination as a potential failure mechanism for the TSV structure. Analytical solutions for various TSV designs are then obtained for the steady-state energy release rate as an upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. Based on these results, the effects of TSV designs and via material properties on the interfacial reliability are elucidated. Finally, potential failure mechanisms for TSV pop-up due to interfacial fracture are discussed.Aerospace Engineerin

Higgs bosons of a supersymmetric E6E_6 model at the Large Hadron Collider

It is found that CP symmetry may be explicitly broken in the Higgs sector of a supersymmetric $E_6$ model with two extra neutral gauge bosons at the one-loop level. The phenomenology of the model, the Higgs sector in particular, is studied for a reasonable parameter space of the model, in the presence of explicit CP violation at the one-loop level. At least one of the neutral Higgs bosons of the model might be produced via the $WW$ fusion process at the Large Hadron Collider.Comment: 23 pages, 5 figures, JHE

Thermomechanical Reliability Challenges For 3D Interconnects With Through-Silicon Vias

Continual scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently threedimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effects of thermally induced stresses on interfacial reliability of TSV structures. First, three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results From finite element analysis (FEA). The stress analysis suggests interfacial delamination as a potential failure mechanism for the TSV structure. An analytical solution is then obtained for the steady-state energy release rate as the upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. With these results, the effects of the TSV dimensions (e.g., via diameter and wafer thickness) on the interfacial reliability are elucidated. Furthermore, the effects of via material properties are discussed.Aerospace Engineerin

Characterization Of Thermal Stresses And Plasticity In Through-Silicon Via Structures For Three-Dimensional Integration

Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress characteristics were compared to that of a Cu thin film structure. The thermo-mechanical characteristics of the Cu TSV structure were correlated to microstructure evolution during thermal cycling and the local plasticity in Cu in a triaxial stress state. These findings were confirmed by microstructure analysis of the Cu vias and finite element analysis (FEA) of the stress characteristics. In addition, the local plasticity and deformation in and around individual TSVs were measured by synchrotron x-ray microdiffraction to supplement the wafer curvature measurements. The importance and implication of the local plasticity and residual stress on TSV reliabilities are discussed for TSV extrusion and device keep-out zone (KOZ).Microelectronics Research Cente

Analysis of short pulse laser altimetry data obtained over horizontal path

Recent pulsed measurements of atmospheric delay obtained by ranging to the more realistic targets including a simulated ocean target and an extended plate target are discussed. These measurements are used to estimate the expected timing accuracy of a correlation receiver system. The experimental work was conducted using a pulsed two color laser altimeter

Thermomechanical Characterization And Modeling For TSV Structures

Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to meet the future technology requirements. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper presents experimental measurements of the thermal stresses in TSV structures and analyses of interfacial reliability. The micro-Raman measurements were made to characterize the local distribution of the near-surface stresses in Si around TSVs. On the other hand, the precision wafer curvature technique was employed to measure the average stress and deformation in the TSV structures subject to thermal cycling. To understand the elastic and plastic behavior of TSVs, the microstructural evolution of the Cu vias was analyzed using focused ion beam (FIB) and electron backscattering diffraction (EBSD) techniques. Furthermore, the impact of thermal stresses on interfacial reliability of TSV structures was investigated by a shear-lag cohesive zone model that predicts the critical temperatures and critical via diameters.Microelectronics Research Cente

Imbibition dynamics of nano-particulate ink-jet drops on micro-porous media

Ink-jet printing of nano-metallic colloidal fluids on to porous media such as coated papers has become a viable method to produce conductive tracks for low-cost, disposable printed electronic devices. However, the formation of well-defined and functional tracks on an absorbing surface is controlled by the drop imbibition dynamics in addition to the well-studied post-impact drop spreading behavior. This study represents the first investigation of the realtime imbibition of ink-jet deposited nano-Cu colloid drops on to coated paper substrates. In addition, the same ink was deposited on to a non-porous polymer surface as a control substrate. By using high-speed video imaging to capture the deposition of ink-jet drops, the time-scales of drop spreading and imbibition were quantified and compared with model predictions. The influences of the coating pore size on the bulk absorption rate and nano-Cu particle distribution have also been studied

Camera for QUasars in EArly uNiverse (CQUEAN)

We describe the overall characteristics and the performance of an optical CCD camera system, Camera for QUasars in EArly uNiverse (CQUEAN), which is being used at the 2.1 m Otto Struve Telescope of the McDonald Observatory since 2010 August. CQUEAN was developed for follow-up imaging observations of red sources such as high redshift quasar candidates (z >= 5), Gamma Ray Bursts, brown dwarfs, and young stellar objects. For efficient observations of the red objects, CQUEAN has a science camera with a deep depletion CCD chip which boasts a higher quantum efficiency at 0.7 - 1.1 um than conventional CCD chips. The camera was developed in a short time scale (~ one year), and has been working reliably. By employing an auto-guiding system and a focal reducer to enhance the field of view on the classical Cassegrain focus, we achieve a stable guiding in 20 minute exposures, an imaging quality with FWHM >= 0.6" over the whole field (4.8' * 4.8'), and a limiting magnitude of z = 23.4 AB mag at 5-sigma with one hour total integration time.Comment: Accepted for publication in PASP. 26 pages including 5 tables and 24 figure

Iron-Based Heavy Quasiparticles in SrFe4_{4}Sb12_{12}: An Infrared Spectroscopic Study

Temperature-dependent infrared reflectivity spectra of SrFe$_{4}$Sb$_{12}$ has been measured. A renormalized Drude peak with a heavy effective mass and a pronounced pseudogap of 10 meV develops in the optical conductivity spectra at low temperatures. As the temperature decreases below 100 K, the effective mass ($m^{*}$) rapidly increases, and the scattering rate ($1/\tau$) is quenched. The temperature dependence of $m^{*}$ and $1/\tau$ indicates that the hybridization between the Fe 3d spins and the charge carriers plays an important role in determining the physical properties of SrFe$_{4}$Sb$_{12}$ at low temperatures. This result is the clear evidence of the iron-based heavy quasiparticles.Comment: 5 pages, 5 figure