Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.Comment: 13 pages, 3 figure

Effect of Ga+^{+} irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers

We report on the magnetic and magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As modified by Ga$^{+}$ ion irradiation using focused ion beam. A marked reduction in the conductivity and the Curie temperature is induced after the irradiation. Furthermore, an enhanced negative magnetoresistance (MR) and a change in the magnetization reversal process are also demonstrated at 4 K. Raman scattering spectra indicate a decrease in the concentration of hole carriers after the irradiation, and a possible origin of the change in the magnetic properties is discussed

Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As

We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga$^+$ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie temperature can be controlled using Ga$^+$ ion irradiation, originating from a change in hole concentration and the corresponding systematic variation in exchange interaction between Mn spins. This change in hole concentration is also verified using micro-Raman spectroscopy. We envisage that this approach offers a means of modifying the ferromagnetic properties of magnetic semiconductors on the micro- or nano-meter scale.Comment: 4 pages, 4 figures, to appear in Jpn. J. Appl. Phys. (Part 2 Letters

Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative assessment of anomalous Hall effect at room temperature is also carried out for the first time.Comment: 8 pages, 4 figures, tabl

Compact Claude cycle refrigerator for laboratory use

A Claude cycle refrigerator with a three stage reciprocating expansion engine is described. Instead of a cam mechanism, valves are driven directly by magnetic solenoids operated by means of a micro processor control system. A swash plate mechanism is used to convert reciprocating motion of the expander pistons to rotary motion. A refrigeration capacity of 8 watts was achieved at 4.5 K with the operating pressure of 1.1 MPa and flow rate of 2.4 g/sec.. An effect of overintake operation was studied. Experimental results show that the efficiency of the expander has a peak point in the region of overintake operation with constant cycle speed, which agrees with theoretical results. The electrically controlled valve system is useful to vary the valve timing to achieve an optimum condition of operation

Ultrahigh field electron cyclotron resonance absorption in In1−x_{1-x}Mnx_xAs films

We have carried out an ultrahigh field cyclotron resonance study of $n$-type In$_{1-x}$Mn$_x$As films, with Mn composition $x$ ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing $x$. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the {\em s-d} and {\em p-d} exchange coupling constants, $\alpha$ and $\beta$, for this important III-V dilute magnetic semiconductor system.Comment: 4 pages, 4 figure