Local gating of a graphene Hall bar by graphene side gates

We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approx. 90 nm. The side gates are also effective in the quantum Hall regime, and allow to modify the longitudinal and Hall resistances

Transmission through a biased graphene bilayer barrier

We study the electronic transmission through a graphene bilayer in the presence of an applied bias between layers. We consider different geometries involving interfaces between both a monolayer and a bilayer and between two bilayers. The applied bias opens a sizable gap in the spectrum inside the bilayer barrier region, thus leading to large changes in the transmission probability and electronic conductance that are controlled by the applied bias.Comment: 10 pages, 8 figures, extended versio

Non-volatile switching in graphene field effect devices

The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "on-state" to an insulating "off-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to non-volatile memories and novel neuromorphic processing concepts.Comment: 14 pages, 4 figures, submitted to IEEE ED

A Spherical Model for "Starless" Cores of Magnetic Molecular Clouds and Dynamical Effects of Dust Grains

In the standard picture of isolated star formation, dense ``starless'' cores are formed out of magnetic molecular clouds due to ambipolar diffusion. Under the simplest spherical geometry, I demonstrate that ``starless'' cores formed this way naturally exhibit a large scale inward motion, whose size and speed are comparable to those detected recently by Taffala et al. and Williams et al. in ``starless'' core L1544. My model clouds have a relatively low mass (of order 10 $M_\odot$) and low field strength (of order 10 $\mu$G) to begin with. They evolve into a density profile with a central plateau surrounded by a power-law envelope, as found previously. The density in the envelope decreases with radius more steeply than those found by Mouschovias and collaborators for the more strongly magnetized, disk-like clouds. At high enough densities, dust grains become dynamically important by greatly enhancing the coupling between magnetic field and the neutral cloud matter. The trapping of magnetic flux associated with the enhanced coupling leads, in the spherical geometry, to a rapid assemblage of mass by the central protostar, which exacerbates the so-called ``luminosity problem'' in star formation.Comment: 27 pages, 4 figures, accepted by Ap

Integrated graphene patch antenna for communications at THz frequencies

Graphene is an attractive material for communications in the THz range due to its ability to support surface plasmon polaritons. This enables a graphene antenna to be smaller in size than its metallic counterpart. In addition, the possibility to control the graphene conductivity during operation by an applied bias leads to the tunability of the resonant frequency of graphene antennas. Graphene-based antennas integrated into transceivers working at THz frequencies may lead to faster and more efficient devices. In this work, we design and simulate a graphene patch antenna that can be integrated into transceivers by through-substrate vias. The tuning of the resonant frequency is also studied by simulations.This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement N° 863337.Peer ReviewedPostprint (author's final draft

Проектирование системы электроснабжения электротехнического завода

В процессе исследования произведен расчет нагрузок трансформаторного и базы в целом с применением различных методов, выбор метода расчета производился на основе исходных данных, а также осуществлен выбор оборудования и его проверка при различных режимах работы. В результате исследования была спроектирована конкретная модель электроснабжения базы по обслуживанию нефтегазодобывающего месторождения, представлена ее экономическая целесообразность и безопасность для окружающей среды.In the process of studying the calculation of the load and base as a whole with the use of various methods, the choice of the calculation method on the basis of the initial data, and also the selection of equipment and its verification under various operating modes was carried out. As a result of the research, a specific model of power supply for the oil and gas industry maintenance base, its economic feasibility and safety for the environment was designed

Rayleigh Imaging of Graphene and Graphene Layers

We investigate graphene and graphene layers on different substrates by monochromatic and white-light confocal Rayleigh scattering microscopy. The image contrast depends sensitively on the dielectric properties of the sample as well as the substrate geometry and can be described quantitatively using the complex refractive index of bulk graphite. For few layers (<6) the monochromatic contrast increases linearly with thickness: the samples behave as a superposition of single sheets which act as independent two dimensional electron gases. Thus, Rayleigh imaging is a general, simple and quick tool to identify graphene layers, that is readily combined with Raman scattering, which provides structural identification.Comment: 8 pages, 9 figure

Wide spectral photoresponse of layered platinum diselenide-based photodiodes

Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe2 thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe2 films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO2/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under illumination. Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1–1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe2 in infrared allows PtSe2 to be utilized as an absorber of infrared light with tunable sensitivity. The results of our study indicate that PtSe2 is a promising option for the development of infrared absorbers and detectors for optoelectronics applications with low-temperature processing conditions