Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible

The growth of silicon crystals from a melt contained in a granulate crucible significantly differs from the classical growth techniques because of the granulate feedstock and the continuous growth process. We performed a systematic study of impurities and structural defects in several such crystals with diameters up to 60 mm. The possible origin of various defects is discussed and attributed to feedstock (concentration of transition metals), growth setup (carbon concentration), or growth process (dislocation density), showing the potential for further optimization. A distinct correlation between crystal defects and bulk carrier lifetime is observed. A bulk carrier lifetime with values up to 600 μs on passivated surfaces of dislocation-free parts of the crystal is currently achieved

Device for producing silicon blocks, comprises vessel, which is provided to receive silicon melt and has bottom, inner side, outer side and middle-longitudinal axis, supporting plate, and unit for generating inhomogeneous temperature field

The device (1) for producing silicon blocks, comprises a vessel (2), which is provided for receiving a silicon melt and has a bottom (4), an inner side (6), an outer side (7) and a middle-longitudinal axis, a supporting plate (3), which indirectly contacts with the bottom in an area-wise manner and forms a base together with the bottom, and a unit for generating an inhomogeneous temperature field at the inner side of the bottom. The base has an inhomogeneous heat transfer coefficient. The supporting plate has two areas with different heat transfer coefficients.; The device (1) for producing silicon blocks, comprises a vessel (2), which is provided for receiving a silicon melt and has a bottom (4), an inner side (6), an outer side (7) and a middle-longitudinal axis, a supporting plate (3), which indirectly contacts with the bottom in an area-wise manner and forms a base together with the bottom, and a unit for generating an inhomogeneous temperature field at the inner side of the bottom. The base has an inhomogeneous heat transfer coefficient. The supporting plate has two areas with different heat transfer coefficients, and has an inhomogeneous thickness DT x y. The bottom has a homogeneous thickness DB. The base has several recesses, one of which is formed as cooling channel that is impacted with a coolant using a cooling device. A single cooling circuit is provided for each recess.; An independent claim is included for a method for producing silicon blocks