Epigenetic Inactivation of the miR-124-1 in Haematological Malignancies

miR-124-1 is a tumour suppressor microRNA (miR). Epigenetic deregulation of miRs is implicated in carcinogenesis. Promoter DNA methylation and histone modification of miR-124-1 was studied in 5 normal marrow controls, 4 lymphoma, 8 multiple myeloma (MM) cell lines, 230 diagnostic primary samples of acute myeloid leukaemia (AML), acute lymphoblastic leukaemia (ALL), chronic myeloid leukaemia (CML), chronic lymphocytic leukaemia (CLL), MM, and non-Hodgkin's lymphoma (NHL), and 53 MM samples at stable disease or relapse. Promoter of miR-124-1 was unmethylated in normal controls but homozygously methylated in 4 of 4 lymphoma and 4 of 8 myeloma cell lines. Treatment of 5-Aza-2′-deoxycytidine led to miR-124-1 demethylation and re-expression of mature miR-124, which also associated with emergence of euchromatic trimethyl H3K4 and consequent downregulation of CDK6 in myeloma cells harboring homozygous miR-124-1 methylation. In primary samples at diagnosis, miR-124-1 methylation was absent in CML but detected in 2% each of MM at diagnosis and relapse/progression, 5% ALL, 15% AML, 14% CLL and 58.1% of NHL (p<0.001). Amongst lymphoid malignancies, miR-124-1 was preferentially methylated in NHL than MM, CLL or ALL. In primary lymphoma samples, miR-124-1 was preferentially hypermethylated in B- or NK/T-cell lymphomas and associated with reduced miR-124 expression. In conclusion, miR-124-1 was hypermethylated in a tumour-specific manner, with a heterochromatic histone configuration. Hypomethylation led to partial restoration of euchromatic histone code and miR re-expression. Infrequent miR-124-1 methylation detected in diagnostic and relapse MM samples showed an unimportant role in MM pathogenesis, despite frequent methylation found in cell lines. Amongst haematological cancers, miR-124-1 was more frequently hypermethylated in NHL, and hence warrants further study

Highly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence properties

Highly ordered cadmium sulphide (CdS) nanoparticle (NP) arrays were fabricated on silicon (Si) substrates using ultrathin alumina membranes as evaporation masks. The CdS NPs are polycrystalline and are composed of ultrasmall closely packed nanocrystallites. These crystallites increase in size as the duration of the CdS evaporation process increases. When the thickness of the NPs changes from about 10 to 50 nm, the size of the crystallites increases from about 5–14 to 20–40 nm. Photoluminescence measurements on the CdS NP arrays show a strong emission spectrum with two subbands that are attributed to band-edge and surface-defect emissions. The peak position and width of the band-edge emission band are closely related to the size of the crystallites in the CdS NPs.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87842/2/103106_1.pd

Dopant Profile Extraction by Inverse Modeling of Scanning Capacitance Microscopy Using Peak dC/dV

Scanning capacitance microscopy (SCM) has proven to be successful for junction delineation. However quantitative dopant profile extraction by SCM still remains a difficult challenge, due to limited understanding of relevant physics especially at p-n junction, as well as difficulties to accurately quantify all parameters in modeling. In this paper we present a new procedure, the use of peak dC/dV at every spatial point, for dopant profile extraction. The advantage of such a technique is twofold. First it eliminates problems encountered using a fixed dc bias such as contrast reversal. Second, it also excludes the need to model interface traps. This is because the peak dC/dV value is independent of the presence of interface traps, as demonstrated in our experimental results. Furthermore, based on our understanding of the influence of mobility degradation at p-n junction, we propose that low surface mobility model should be used in simulation so that only the accumulation-to-depletion dC/dV is extracted

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Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements

This article proposes a method for evaluating the quality of the overlying oxide on samples used in scanning capacitance microscopy (SCM) dopant profile extraction. The method can also be used generally as a convenient in-process method for monitoring oxide quality directly after the oxidation process without prior metallization of the oxide-semiconductor sample. The spread of the differential capacitance characteristic (dC/dV versus V plot), characterized using its full width at half maximum (FWHM), was found to be strongly dependent on the interface trap density as a consequence of the stretch-out effect of interface traps on the capacitance-voltage (C-V) curve. Results show that the FWHM of the dC/dV characteristic is a sensitive monitor of oxide quality (in terms of interface trap density) as it is not complicated by localized oxide charging effects as in the case of the SCM probe tip voltage corresponding to maximum dC/dV. The magnitude of the dC/dV peak, at any given surface potential, was also found to be independent of the interface traps and only dependent on the substrate dopant concentration, which makes SCM dopant profile extraction possible

An Energy Dependent Model for Type I Magnetic Contrast in the Scanning Electron Microscope

The modelling of the magnetic contrast phenomenon in the scanning electron microscope (SEM) is important in understanding the physics of the contrast mechanism and the associated signal detection. In this paper, we report an improved analytical model for Type I magnetic contrast calculations using an approximate form of the Chung and Everhart secondary electron (SE) energy distribution. Previous studies have neglected this factor by assuming a mono-energetic model in order to simplify the calculations. This new model can be used to study different material specimens by appropriate choice of the work function and field-distance integral. The effect of energy filtering on the Type I magnetic contrast and quality factor can also be studied with the improved model by substituting the low and high energy limits of the filtered SE distribution into the closed-form analytical expressions obtained. Results of the above-mentioned effects and the effect of collector aperturing are reported in this paper using the new improved energy dependent model

An exact universal amplitude ratio for percolation

The universal amplitude ratio $\tilde{R}_{\xi}$ for percolation in two dimensions is determined exactly using results for the dilute A model in regime 1, by way of a relationship with the q-state Potts model for q<4.Comment: 5 pages, LaTeX, submitted to J. Phys. A. One paragraph rewritten to correct error