Numerical Investigation on Asymmetric Bilayer System at Integer Filling Factor

Deformation of the easy-axis ferromagnetic state in asymmetric bilayer systems are investigated numerically. Using the exact diagonalization the easy-axis to easy-plane ferromagnetic transition at total filling factor 3 or 4 is investigated. At still higher filling, novel stripe state in which stripes are aligned in the vertical direction occurs. The Hartree-Fock energies of relevant ordered states are calculated and compared.Comment: 4 pages, 6 figures, Proceedings of EP2DS-15, to appear in Physica

Interlayer exchange coupling in (Ga,Mn)As based multilayers

Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.Comment: 4 pages, 2 figures. To be published in physica status solidi c as the proceedings of the PASPS IV conferenc

Non-vanishing spin Hall currents in disordered spin-orbit coupling systems

Spin currents that flow perpendicular to the electric field direction are generic in metals and doped semiconductors with spin-orbit coupling. It has recently been argued that the spin Hall conductivity can be dominated by an intrinsic contribution which follows from Bloch state distortion in the presence of an electric field. Here we report on an numerical demonstration of the robustness of this effect in the presence of disorder scattering for the case of a two-dimensional electron-gas with Rashba spin-orbit interactions (R2DES).Comment: 4 pages, 3 figure

Infrared magneto-optical properties of (III,Mn)V ferromagetic semiconductors

We present a theoretical study of the infrared magneto-optical properties of ferromagnetic (III,Mn)V semiconductors. Our analysis combines the kinetic exchange model for (III,Mn)V ferromagnetism with Kubo linear response theory and Born approximation estimates for the effect of disorder on the valence band quasiparticles. We predict a prominent feature in the ac-Hall conductivity at a frequency that varies over the range from 200 to 400 meV, depending on Mn and carrier densities, and is associated with transitions between heavy-hole and light-hole bands. In its zero frequency limit, our Hall conductivity reduces to the $\vec k$-space Berry's phase value predicted by a recent theory of the anomalous Hall effect that is able to account quantitatively for experiment. We compute theoretical estimates for magnetic circular dichroism, Faraday rotation, and Kerr effect parameters as a function of Mn concentration and free carrier density. The mid-infrared response feature is present in each of these magneto-optical effects.Comment: 11 pages, 5 figure

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration due to Mn atoms at random non-crystallographic positions. In the epilayer, Mn incorporated at interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coeffcient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.Comment: 9 pages, 9 figure

Coherent control of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As

We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well as contributions to the magneto-optical signal that are not connected with the magnetization dynamics.Comment: 6 pages, 3 figures, accepted in Applied Physics Letter

Fast optical control of spin in semiconductor interfacial structures

We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system