Silicon micromachined waveguide components at 0.75 to 1.1 THz

Silicon micromachined waveguide components operating in the WM-250 (WR-1) waveguide band (0.75 to 1.1 THz) are measured. Through lines are used to characterize the waveguide loss with and without an oxide etch to reduce the surface roughness. A sidewall roughness of 100nm is achieved, enabling a waveguide loss of 0.2dB/mm. A 1THz band-pass filter is also measured to characterize the precision of fabrication process. A 1.8% shift in frequency is observed and can be accounted for by the 0.5deg etch angle and 2um expansion of the features by the oxide etch. The measured filter has a 13% 3dB bandwidth and 2.5dB insertion loss through the passband

Silicon Micromachined Microlens Array for THz Antennas

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a smooth curvature. The measured height of the silicon microlens is about 280 microns. In this case, the original height of the photoresist was 210 microns. The change was due to the etching selectivity of 1.33 between photoresist and silicon. The measured surface roughness of the silicon microlens shows the peak-to-peak surface roughness of less than 0.5 microns, which is adequate in THz frequency. For example, the surface roughness should be less than 7 microns at 600 GHz range. The SEM (scanning electron microscope) image of the microlens confirms the smooth surface. The beam pattern at 550 GHz shows good directivity

On-Chip Power-Combining for High-Power Schottky Diode Based Frequency Multipliers

A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line

340 Ghz Multipixel Transceiver

A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart

1.6:1 bandwidth two-layer antireflection structure for silicon matched to the 190–310 GHz atmospheric window

Although high-resistivity, low-loss silicon is an excellent material for terahertz transmission optics, its high refractive index necessitates an antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive-ion etching (DRIE). A wafer with this treatment on both sides has <−20  dB (<1%) reflectance over 187–317 GHz at a 15° angle of incidence in TE polarization. We also demonstrated that bonding wafers introduce no reflection features above the −20  dB level (also in TE at 15°), reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment

1.6:1 bandwidth two-layer antireflection structure for silicon matched to the 190–310 GHz atmospheric window

Although high-resistivity, low-loss silicon is an excellent material for terahertz transmission optics, its high refractive index necessitates an antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive-ion etching (DRIE). A wafer with this treatment on both sides has <−20  dB (<1%) reflectance over 187–317 GHz at a 15° angle of incidence in TE polarization. We also demonstrated that bonding wafers introduce no reflection features above the −20  dB level (also in TE at 15°), reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment

Wafer-To-Wafer Alignment Method

A silicon alignment pin is used to align successive layer of component made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented

Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

Submillimeter heterodyne instruments play a critical role in addressing fundamental questions regarding the evolution of galaxies as well as being a crucial tool in planetary science. To make these instruments compatible with small platforms, especially for the study of the outer planets, or to enable the development of multi-pixel arrays, it is essential to reduce the mass, power, and volume of the existing single-pixel heterodyne receivers. Silicon micromachining technology is naturally suited for making these submillimeter and terahertz components, where precision and accuracy are essential. Waveguide and channel cavities are etched in a silicon bulk material using deep reactive ion etching (DRIE) techniques. Power amplifiers, multiplier and mixer chips are then integrated and the silicon pieces are stacked together to form a supercompact receiver front end. By using silicon micromachined packages for these components, instrument mass can be reduced and higher levels of integration can be achieved. A method is needed to assemble accurately these silicon pieces together, and a technique was developed here using etched pockets and silicon pins to align two wafers together