Solar cell with MXene electrode.

A solar cell (100) includes a p-type silicon layer (105) having a first side and a second side and an n-type silicon layer (110) having a first side and a second side. The first side of the n-type silicon layer is arranged on the second side of the p-type silicon layer. The solar cell also includes a first metal electrode (115) arranged on the first side of the p-type silicon layer and a second metal electrode (120) arranged on the second side of the n-type silicon layer. The second metal electrode includes an MXene

Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode

Enhanced photoelectrochemical hydrogen production efficiency of MoS2-Si heterojunction.

Photoelectrochemical water splitting is one of the viable approaches to produce clean hydrogen energy from water. Herein, we report MoS 2 /Si-heterojunction (HJ) photocathode for PEC H 2 production. The MoS 2 /Si-HJ photocathode exhibits exceptional PEC H 2 production performance with a maximum photocurrent density of 36.33 mA/cm 2 , open circuit potential of 0.5 V vs. RHE and achieves improved long-term stability up to 10 h of reaction time. The photocurrent density achieved by MoS 2 /Si-HJ photocathode is significantly higher than most of the MoS 2 coupled Si-based photocathodes reported elsewhere, indicating excellent PEC H 2 production performance

Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication.

An advanced light-fidelity (Li-Fi) system based on the blue Gallium nitride (GaN) laser diode (LD) with a compact white-light phosphorous diffuser is demonstrated for fusing the indoor white-lighting and visible light communication (VLC). The phosphorous diffuser adhered blue GaN LD broadens luminescent spectrum and diverges beam spot to provide ample functionality including the completeness of Li-Fi feature and the quality of white-lighting. The phosphorous diffuser diverged white-light spot covers a radiant angle up to 120(o) with CIE coordinates of (0.34, 0.37). On the other hand, the degradation on throughput frequency response of the blue LD is mainly attributed to the self-feedback caused by the reflection from the phosphor-air interface. It represents the current state-of-the-art performance on carrying 5.2-Gbit/s orthogonal frequency-division multiplexed 16-quadrature-amplitude modulation (16-QAM OFDM) data with a bit error rate (BER) of 3.1 × 10(-3) over a 60-cm free-space link. This work aims to explore the plausibility of the phosphorous diffuser diverged blue GaN LD for future hybrid white-lighting and VLC systems

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

Reactively sputtered nickel oxide (NiO_x) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O_2(g). These NiO_x coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiO_x films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O_2(g)

Metal contact and carrier transport in single crystalline CH3NH3PbBr3 perovskite

Organic-inorganic perovskites have arrived at the forefront of solar technology due to their impressive carrier lifetimes and superior optoelectronic properties. By having the cm-sized perovskite single crystal and employing device patterning techniques, and the transfer length method (TLM), we are able to get the insight into the metal contact and carrier transport behaviors, which is necessary for maximizing device performance and efficiency. In addition to the metal work function, we found that the image force and interface charge pinning effects also affect the metal contact, and the studied single crystal CH3NH3PbBr3 features Schottky barriers of 0.17 eV, 0.38 eV, and 0.47 eV for Au, Pt, and Ti electrodes, respectively. Furthermore, the surface charges lead to the thermally activated transport from 207 K to 300 K near the perovskite surface. In contrast, from 120 K to 207 K, the material exhibited three-dimensional (3D) variable range hopping (VRH) carrier transport behavior. Understanding these fundamental contact and transport properties of perovskite will enable future electronic and optoelectronic applications