Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Using electron beam evaporation, a Si/CeO2/Si(111) structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rutherford backscattering and energy dispersive x-ray analysis have been used to confirm the presence of a continuous 23 Å CeO2 layer at the interface. Rutherford backscattering and x-ray photoemission spectroscopy show an additional presence of cerium both at the exposed silicon surface and incorporated in low levels (~ 1%) within the silicon film, suggesting a growth mechanism with cerium riding atop the silicon growth front leaving behind small amounts of cerium incorporated in the growing silicon crystal

The partially averaged field approach to cosmic ray diffusion

The kinetic equation for particles interacting with turbulent fluctuations is derived by a new nonlinear technique which successfully corrects the difficulties associated with quasilinear theory. In this new method the effects of the fluctuations are evaluated along particle orbits which themselves include the effects of a statistically averaged subset of the possible configurations of the turbulence. The new method is illustrated by calculating the pitch angle diffusion coefficient D sub Mu Mu for particles interacting with slab model magnetic turbulence, i.e., magnetic fluctuations linearly polarized transverse to a mean magnetic field. Results are compared with those of quasilinear theory and also with those of Monte Carlo calculations. The major effect of the nonlinear treatment in this illustration is the determination of D sub Mu Mu in the vicinity of 90 deg pitch angles where quasilinear theory breaks down. The spatial diffusion coefficient parallel to a mean magnetic field is evaluated using D sub Mu Mu as calculated by this technique. It is argued that the partially averaged field method is not limited to small amplitude fluctuating fields and is hence not a perturbation theory

A new approach to cosmic ray diffusion theory

An approach is presented for deriving a diffusion equation for charged particles in a static, random magnetic field. The approach differs from the usual, quasi-linear one, in that particle orbits in the average field are replaced by particle orbits in a partially averaged field. In this way the fluctuating component of the field significantly modifies the particle orbits in those cases where the orbits in the average field are unrealistic. The method permits the calculation of a finite value for the pitch angle diffusion coefficient for particles with a pitch angle of 90 rather than the divergent or ambiguous results obtained by quasi-linear theories. Results of the approach are compared with results of computer simulations using Monte Carlo techniques

Quasi-linear theory via the cumulant expansion approach

The cumulant expansion technique of Kubo was used to derive an intergro-differential equation for f , the average one particle distribution function for particles being accelerated by electric and magnetic fluctuations of a general nature. For a very restricted class of fluctuations, the f equation degenerates exactly to a differential equation of Fokker-Planck type. Quasi-linear theory, including the adiabatic assumption, is an exact theory for this limited class of fluctuations. For more physically realistic fluctuations, however, quasi-linear theory is at best approximate

Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

The electrical characteristics of various size tunnel switch diode devices, composed of Al/SiO2/n-Si/p+-Si layers, which operate with a range of parameters (such as current densities in excess of 104 A/cm2) that stress the oxide layer far beyond the levels used in typical thin oxide metal-oxide semiconductor research have been examined. It is found that the first time a large current and electric field are applied to the device, a "forming" process enhances transport through the oxide in the vicinity of the edges of the gate electrode, but the oxide still retains its integrity as a tunnel barrier. The device operation is relatively stable to stresses of greater than 107 C/cm2 areally averaged, time-integrated charge injection. Duplication and characterization of these modified oxide tunneling properties was attempted using scanning tunneling microscopy (STM) to stress and probe the oxide. Electrical stressing with the STM tip creates regions of reduced conductivity, possibly resulting from trapped charge in the oxide. Lateral variations in the conductivity of the unstressed oxide over regions roughly 20–50 nm across were also found

Cosmic ray diffusion: Report of the Workshop in Cosmic Ray Diffusion Theory

A workshop in cosmic ray diffusion theory was held at Goddard Space Flight Center on May 16-17, 1974. Topics discussed and summarized are: (1) cosmic ray measurements as related to diffusion theory; (2) quasi-linear theory, nonlinear theory, and computer simulation of cosmic ray pitch-angle diffusion; and (3) magnetic field fluctuation measurements as related to diffusion theory

Applications of numerical codes to space plasma problems

Solar wind, earth's bowshock, and magnetospheric convection and substorms were investigated. Topics discussed include computational physics, multifluid codes, ionospheric irregularities, and modeling laser plasmas