Transport Properties of Carbon Nanotube C60_{60} Peapods

We measure the conductance of carbon nanotube peapods from room temperature down to 250mK. Our devices show both metallic and semiconducting behavior at room temperature. At the lowest temperatures, we observe single electron effects. Our results suggest that the encapsulated C$_{60}$ molecules do not introduce substantial backscattering for electrons near the Fermi level. This is remarkable given that previous tunneling spectroscopy measurements show that encapsulated C$_{60}$ strongly modifies the electronic structure of a nanotube away from the Fermi level.Comment: 9 pages, 4 figures. This is one of two manuscripts replacing the one orginally submitted as arXiv:cond-mat/0606258. The other one is arXiv:0704.3641 [cond-mat

Effect of calcium supplements on risk of myocardial infarction and cardiovascular events : meta-analysis

Peer reviewedPublisher PD

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an essential parameter describing spin qubits, and we extract this splitting from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state.Comment: 4 pages with 3 figure

Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.Comment: 5 pages, 3 figure