Achieving controllable coupling of dopants in silicon is crucial for
operating donor-based qubit devices, but it is difficult because of the small
size of donor-bound electron wavefunctions. Here we report the characterization
of a quantum dot coupled to a localized electronic state, and we present
evidence of controllable coupling between the quantum dot and the localized
state. A set of measurements of transport through this device enable the
determination of the most likely location of the localized state, consistent
with an electronically active impurity in the quantum well near the edge of the
quantum dot. The experiments we report are consistent with a gate-voltage
controllable tunnel coupling, which is an important building block for hybrid
donor and gate-defined quantum dot devices.Comment: 5 pages, 3 figure
