The renaissance of hybrid solar cells: progresses, challenges, and perspectives

This is the publisher's version, also available electronically from http://pubs.rsc.org/en/Content/ArticleLanding/2013/EE/c3ee23666h#!divAbstractSolution-processed hybrid solar cells, a blend of conjugated polymers and semiconducting nanocrystals, are a promising candidate for next-generation energy-conversion devices. The renaissance of this field in recent years has yielded a much deeper understanding of optoelectronic interactions in organic–inorganic hybrid systems. In this article, we review the state-of-the-art progress in hybrid bulk heterojunction solar cells, covering new materials design, interfacial interaction, and processing control. Furthermore, critical challenges that determine photovoltaic performance and prospects for future directions are discussed

Creating a Long-Term Diabetic Rabbit Model

This study was to create a long-term rabbit model of diabetes mellitus for medical studies of up to one year or longer and to evaluate the effects of chronic hyperglycemia on damage of major organs. A single dose of alloxan monohydrate (100 mg/kg) was given intravenously to 20 young New Zealand White rabbits. Another 12 age-matched normal rabbits were used as controls. Hyperglycemia developed within 48 hours after treatment with alloxan. Insulin was given daily after diabetes developed. All animals gained some body weight, but the gain was much less than the age-matched nondiabetic rabbits. Hyperlipidemia, higher blood urea nitrogen and creatinine were found in the diabetic animals. Histologically, the pancreas showed marked beta cell damage. The kidneys showed significantly thickened afferent glomerular arterioles with narrowed lumens along with glomerular atrophy. Lipid accumulation in the cytoplasm of hepatocytes appeared as vacuoles. Full-thickness skin wound healing was delayed. In summary, with careful management, alloxan-induced diabetic rabbits can be maintained for one year or longer in reasonably good health for diabetic studies

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

To explore new constituents in two-dimensional materials and to combine their best in van der Waals heterostructures, are in great demand as being unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI2 crystals as thin as few-layers are first synthesized, particularly through a facile low-temperature solution approach with the crystals of large size, regular shape, different thicknesses and high-yields. As a prototypical demonstration of flexible band engineering of PbI2-based interfacial semiconductors, these PbI2 crystals are subsequently assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS2 is strongly enhanced in MoS2/PbI2 stacks, while a dramatic photoluminescence quenching of WS2 and WSe2 is revealed in WS2/PbI2 and WSe2/PbI2 stacks. This is attributed to the effective heterojunction formation between PbI2 and these monolayers, but type I band alignment in MoS2/PbI2 stacks where fast-transferred charge carriers accumulate in MoS2 with high emission efficiency, and type II in WS2/PbI2 and WSe2/PbI2 stacks with separated electrons and holes suitable for light harvesting. Our results demonstrate that MoS2, WS2, WSe2 monolayers with very similar electronic structures themselves, show completely distinct light-matter interactions when interfacing with PbI2, providing unprecedent capabilities to engineer the device performance of two-dimensional heterostructures.Comment: 36 pages, 5 figure

Understanding the Improvement in the Stability of a Self-Assembled Multiple-Quantum Well Perovskite Light-Emitting Diode.

We fabricate two-dimensional Ruddlesden-Popper layered perovskite films by introducing 1-naphthylmethylamine iodide into the precursor, which forms a self-assembled multiple-quantum well (MQW) structure. Enabling outstanding electroluminescence properties, light-emitting diodes (LEDs) using the MQW structure also demonstrate significant improvement in stability in comparison with the stability of devices made from formamidinium lead iodide. To understand this, we perform electroabsorption spectroscopy, wide-field photoluminescence imaging microscopy and impedance spectroscopy. Our approach enables us to determine the mobility of iodide ions in MQW perovskites to be (1.5 ± 0.8) × 10-8 cm2 V-1 s-1, ∼2 orders of magnitude lower than that in three-dimensional perovskites. We highlight that activated ion migration is a requirement for a degradation pathway in which a steady supply of ions is needed to modify the perovskite/external contact interfaces. Therefore, the improvement in stability in a MQW perovskite LED is directly attributed to the suppressed ion migration due to the inserted organic layer acting as a barrier for ionic movement

Minimising efficiency roll-off in high-brightness perovskite light-emitting diodes.

Efficiency roll-off is a major issue for most types of light-emitting diodes (LEDs), and its origins remain controversial. Here we present investigations of the efficiency roll-off in perovskite LEDs based on two-dimensional layered perovskites. By simultaneously measuring electroluminescence and photoluminescence on a working device, supported by transient photoluminescence decay measurements, we conclude that the efficiency roll-off in perovskite LEDs is mainly due to luminescence quenching which is likely caused by non-radiative Auger recombination. This detrimental effect can be suppressed by increasing the width of quantum wells, which can be easily realized in the layered perovskites by tuning the ratio of large and small organic cations in the precursor solution. This approach leads to the realization of a perovskite LED with a record external quantum efficiency of 12.7%, and the efficiency remains to be high, at approximately 10%, under a high current density of 500 mA cm-2

On-Chip Super-Resolution Imaging with Fluorescent Polymer Films

Wide field of view (FOV), label-free super-resolution imaging is demonstrated using a specially designed waveguide chip that can illuminate a sample with multi-colour evanescent waves travelling along different directions. The method is enabled by a polymer fluorescent film which emits over a broad wavelength range. Its polygonal geometry ensures coverage over all illumination directions, enabling high fidelity image reconstruction whilst minimizing distortion and image blurring. By frequency shifting and iterative stitching of different spatial frequencies in Fourier space, the reconstruction of two dimensional samples is achieved without distortion over wide FOVs. The fabrication process is facile and compatible with conventional semiconductor-fabrication methods. The super-resolution chip (SRC) can thus be produced with high yield, offer opportunities for potential conjunction of super-resolution techniques integrated optical circuits or for the development of single-use diagnostic kits

Investigation of Electrode Electrochemical Reactions in CH3 NH3 PbBr3 Perovskite Single-Crystal Field-Effect Transistors.

Optoelectronic devices based on metal halide perovskites, including solar cells and light-emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic-inorganic hybrid perovskite materials can enable high-performance, solution-processed field-effect transistors (FETs) for next-generation, low-cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single-crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source-drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such "ideal" interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom-contact, bottom-gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single-crystal FETs with high mobility of up to ≈15 cm2 V-1 s-1 at 80 K. This work addresses one of the key challenges toward the realization of high-performance solution-processed perovskite FETs

Unveiling the additive-assisted oriented growth of perovskite crystallite for high performance light-emitting diodes.

Solution-processed metal halide perovskites have been recognized as one of the most promising semiconductors, with applications in light-emitting diodes (LEDs), solar cells and lasers. Various additives have been widely used in perovskite precursor solutions, aiming to improve the formed perovskite film quality through passivating defects and controlling the crystallinity. The additive's role of defect passivation has been intensively investigated, while a deep understanding of how additives influence the crystallization process of perovskites is lacking. Here, we reveal a general additive-assisted crystal formation pathway for FAPbI3 perovskite with vertical orientation, by tracking the chemical interaction in the precursor solution and crystallographic evolution during the film formation process. The resulting understanding motivates us to use a new additive with multi-functional groups, 2-(2-(2-Aminoethoxy)ethoxy)acetic acid, which can facilitate the orientated growth of perovskite and passivate defects, leading to perovskite layer with high crystallinity and low defect density and thereby record-high performance NIR perovskite LEDs (~800 nm emission peak, a peak external quantum efficiency of 22.2% with enhanced stability)