NMR Probing Spin Excitations in the Ring-Like Structure of a Two-Subband System

Resistively detected nuclear magnetic resonance (NMR) is observed inside the ring-like structure, with a quantized Hall conductance of 6e^2/h, in the phase diagram of a two subband electron system. The NMR signal persists up to 400 mK and is absent in other states with the same quantized Hall conductance. The nuclear spin-lattice relaxation time, T1, is found to decrease rapidly towards the ring center. These observations are consistent with the assertion of the ring-like region being a ferromagnetic state that is accompanied by collective spin excitations.Comment: 4 pages, 4 figure

Zero-Bias Anomalies in Narrow Tunnel Junctions in the Quantum Hall Regime

We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors $\nu > 1$ and a strongly suppressed conductance for $\nu < 1$. A transition between the two behaviors is found near $\nu \approx 1$. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for $\nu < 1$ occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the $n = 0$ Landau levels. The ZBA for $\nu > 1$ arises from weak tunneling of quasiparticles between the $n = 1$ edge channels.Comment: version with edits for clarit

Defect interactions in Sn_1-<i>x</i>Ge_<i>x</i> random alloys

Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1-xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard's Law are consistent with experimental results

<i>E</i> centers in ternary Si_1-<i>x-y</i>Ge_<i>x</i>Sn_<i>y</i> random alloys

Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1-x-yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125

Advanced water window x-ray microscope design and analysis

The project was focused on the design and analysis of an advanced water window soft-x-ray microscope. The activities were accomplished by completing three tasks contained in the statement of work of this contract. The new results confirm that in order to achieve resolutions greater than three times the wavelength of the incident radiation, it will be necessary to use aspherical mirror surfaces and to use graded multilayer coatings on the secondary (to accommodate the large variations of the angle of incidence over the secondary when operating the microscope at numerical apertures of 0.35 or greater). The results are included in a manuscript which is enclosed in the Appendix

Phase stability and the arsenic vacancy defect in In_xGa_1-xAs

The introduction of defects, such as vacancies, into InxGa1-xAs can have a dramatic impact on the physical and electronic properties of the material. Here we employ ab initio simulations of quasirandom supercells to investigate the structure of InxGa1-xAs and then examine the energy and volume changes associated with the introduction of an arsenic vacancy defect. We predict that both defect energies and volumes for intermediate compositions of InxGa1-xAs differ significantly from what would be expected by assuming a simple linear interpolation of the end member defect energies/volumes

Possible TeV Source Candidates In The Unidentified EGRET Sources

We study the $\gamma$-ray emission from the pulsar magnetosphere based on outer gap models, and the TeV radiation from pulsar wind nebulae (PWNe) through inverse Compton scattering using a one-zone model. We showed previously that GeV radiation from the magnetosphere of mature pulsars with ages of $\sim 10^5-10^6$ years old can contribute to the high latitude unidentified EGRET sources. We carry out Monte Carlo simulations of $\gamma$-ray pulsars in the Galaxy and the Gould Belt, assuming the pulsar birth rate, initial position, proper motion velocity, period, and magnetic field distribution and evolution based on observational statistics. We select from the simulation a sample of mature pulsars in the Galactic plane ($|b|\leq 5^\circ$) and in the high latitude ($|b|> 5^\circ$) which could be detected by EGRET. The TeV flux from the pulsar wind nebulae of our simulated sample through the inverse Compton scattering by relativistic electrons on the microwave cosmic background and synchrotron seed photons are calculated. The predicted fluxes are consistent with the present observational constraints. We suggest that strong EGRET sources can be potential TeV source candidates for present and future ground-based TeV telescopes.Comment: Minor changes, MNRAS in pres