Scanning Capacitance Spectroscopy on n\u3csup\u3e+\u3c/sup\u3e-p Asymmetrical Junctions in Multicrystalline Si Solar Cells

We report on a scanning capacitance spectroscopy (SCS) study on the n+-p junction of multicrystalline silicon solar cells. We found that the spectra taken at space intervals of ∼10 nm exhibit characteristic features that depend strongly on the location relative to the junction. The capacitance-voltage spectra exhibit a local minimum capacitance value at the electrical junction, which allows the junction to be identified with ∼10-nm resolution. The spectra also show complicated transitions from the junction to the n-region with two local capacitance minima on the capacitance-voltage curves; similar spectra to that have not been previously reported in the literature. These distinctive spectra are due to uneven carrier-flow from both the n- and p-sides. Our results contribute significantly to the SCS study on asymmetrical junctions

Statistical analysis of fast hard X-ray bursts by SMM observations and microwave bursts by ground-based observations

In order to understand the relationship between fast hard X-ray bursts (HXRB) and microwave bursts (MWB), data were used from the following publications: NASA Technical Memorandum 84998; Solar Geological Data (1980 to 1983); monthly report of Solar Radio Emission; and NASA and NSF: Solar Geophysical Data (1980 to 1983). For analyzing individual events, the criterion of the same event for HXRB and MWB is determined by peak time difference. There is a good linear correlation between the physical parameter of HXRB and MWB

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for non-volatile memory and neuromorphic computing devices. To RESET the memory cell, crystalline Ge-Sb-Te has to undergo phase transitions firstly to a liquid state and then to an amorphous state, corresponding to an abrupt change in electrical resistance. In this work, we demonstrate a progressive amorphization process in GeSb2Te4 thin films under electron beam irradiation on transmission electron microscope (TEM). Melting is shown to be completely absent by the in situ TEM experiments. The progressive amorphization process resembles closely the cumulative crystallization process that accompanies a continuous change in electrical resistance. Our work suggests that if displacement forces can be implemented properly, it should be possible to emulate symmetric neuronal dynamics by using PCMs

Effect of source tampering in the security of quantum cryptography

The security of source has become an increasingly important issue in quantum cryptography. Based on the framework of measurement-device-independent quantum-key-distribution (MDI-QKD), the source becomes the only region exploitable by a potential eavesdropper (Eve). Phase randomization is a cornerstone assumption in most discrete-variable (DV-) quantum communication protocols (e.g., QKD, quantum coin tossing, weak coherent state blind quantum computing, and so on), and the violation of such an assumption is thus fatal to the security of those protocols. In this paper, we show a simple quantum hacking strategy, with commercial and homemade pulsed lasers, by Eve that allows her to actively tamper with the source and violate such an assumption, without leaving a trace afterwards. Furthermore, our attack may also be valid for continuous-variable (CV-) QKD, which is another main class of QKD protocol, since, excepting the phase random assumption, other parameters (e.g., intensity) could also be changed, which directly determine the security of CV-QKD.Comment: 9 pages, 6 figure