Role of remote interfacial phonons in the resistivity of graphene

The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene

Magnetic field induced localization in carbon nanotubes

The electronic spectra of long carbon nanotubes (CNTs) can, to a very good approximation, be obtained using the dispersion relation of graphene with both angular and axial periodic boundary conditions. In short CNTs one must account for the presence of open ends, which may give rise to states localized at the edges. We show that when a magnetic field is applied parallel to the tube axis, it modifies both momentum quantization conditions, causing hitherto extended states to localize near the ends. This localization is gradual and initially the involved states are still conducting. Beyond a threshold value of the magnetic field, which depends on the nanotube chirality and length, the localization is complete and the transport is suppressed.Comment: 5 pages, 3 figure

Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS₂ Barristors

The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS2 barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors

Charge Transport in UV-Oxidized Graphene and Its Dependence on the Extent of Oxidation

Graphene oxides with different degrees of oxidation are prepared by controlling UV irradiation on graphene, and the charge transport and the evolution of the transport gap are investigated according to the extent of oxidation. With increasing oxygenous defect density [Formula: see text] , a transition from ballistic to diffusive conduction occurs at [Formula: see text] cm [Formula: see text] and the transport gap grows in proportion to [Formula: see text]. Considering the potential fluctuation related to the [Formula: see text] puddle, the bandgap of graphene oxide is deduced to be [Formula: see text] meV. The temperature dependence of conductivity showed metal–insulator transitions at [Formula: see text] cm [Formula: see text] , consistent with Ioffe–Regel criterion. For graphene oxides at [Formula: see text] cm [Formula: see text] , analysis indicated charge transport occurred via 2D variable range hopping conduction between localized [Formula: see text] domain. Our work elucidates the transport mechanism at different extents of oxidation and supports the possibility of adjusting the bandgap with oxygen content

Indirect Band Gap in Scrolled MoS₂ Monolayers

MoS2 nanoscrolls that have inner core radii of similar to 250 nm are generated from MoS2 monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS2 monolayer, originally a direct gap semiconductor (similar to 1.85 eV (optical)), changes into an indirect gap semiconductor (similar to 1.6 eV) upon scrolling. The size of the indirect gap for the MoS2 nanoscroll is larger than that of a MoS2 bilayer (similar to 1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS2 nanoscroll compared to Bernal-stacked MoS2 few-layers. Transport measurements on MoS2 nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of similar to 1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS2 nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials.11Nsciescopu

Random telegraph noise in metallic single-walled carbon nanotubes

We have investigated random telegraph noise (RTN) observed in individual metallic carbon nanotubes (CNTs). Mean lifetimes in high- and low-current states, shigh and slow, have been studied as a function of bias-voltage and gate-voltage as well as temperature. By analyzing the statistics and features of the RTN, we suggest that this noise is due to the random transition of defects between two metastable states, activated by inelastic scattering with conduction electrons. Our results indicate an important role of defect motions in the 1=f noise in CNTs.Comment: 4 page

Semiconductor-less vertical transistor with I-ON/I-OFF of 10(6)

Semiconductors have long been perceived as a prerequisite for solid-state transistors. Although switching principles for nanometer-scale devices have emerged based on the deployment of two-dimensional (2D) van der Waals heterostructures, tunneling and ballistic currents through short channels are difficult to control, and semiconducting channel materials remain indispensable for practical switching. In this study, we report a semiconductor-less solid-state electronic device that exhibits an industry-applicable switching of the ballistic current. This device modulates the field emission barrier height across the graphene-hexagonal boron nitride interface with ION/IOFF of 106 obtained from the transfer curves and adjustable intrinsic gain up to 4, and exhibits unprecedented current stability in temperature range of 15–400 K. The vertical device operation can be optimized with the capacitive coupling in the device geometry. The semiconductor-less switching resolves the long-standing issue of temperature-dependent device performance, thereby extending the potential of 2D van der Waals devices to applications in extreme environments. © 2021, The Author(s).1