Phonon-assisted relaxation between hole states in quantum dot molecules

We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a double quantum dot. We derive hole states and relaxation rates from kp Hamiltonians and show that there is a finite distance between the dots where lifetimes of hole states are very long which is related to vanishing tunnel coupling. We show also that the light hole admixture to hole states can considerably affect the hole relaxation rates even though its magnitude is very small

Topologically confined states at corrugations of gated bilayer graphene

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear at the corrugation, which reveal as robust transport channels along the stacking boundary. With increasing size of the corrugation, more localized, quantum-well-like states emerge. These finite-size states are also conductive along the fold, but in contrast to the stacking boundary states, which are gapless, they present a gap. We have also studied periodic corrugations in bilayer graphene; our findings show that such corrugations between AB- and BA-stacked regions behave as conducting channels that can be easily identified by their shape

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators

Interface States in Carbon Nanotube Junctions: Rolling up graphene

We study the origin of interface states in carbon nanotube intramolecular junctions between achiral tubes. By applying the Born-von Karman boundary condition to an interface between armchair- and zigzag-terminated graphene layers, we are able to explain their number and energies. We show that these interface states, costumarily attributed to the presence of topological defects, are actually related to zigzag edge states, as those of graphene zigzag nanoribbons. Spatial localization of interface states is seen to vary greatly, and may extend appreciably into either side of the junction. Our results give an alternative explanation to the unusual decay length measured for interface states of semiconductor nanotube junctions, and could be further tested by local probe spectroscopies

Electronic properties of graphene grain boundaries

Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.Grain boundaries and defect lines in graphene are intensively studied for their novel electronic and magnetic properties. However, there is not a complete comprehension of the appearance of localized states along these defects. Graphene grain boundaries are herein seen as the outcome of matching two semi-infinite graphene sheets with different edges. We classify the energy spectra of grain boundaries into three different types, directly related to the combination of the four basic classes of spectra of graphene edges. From the specific geometry of the grains, we are able to obtain the band structure and the number of localized states close to the Fermi energy. This provides a new understanding of states localized at grain boundaries, showing that they are derived from the edge states of graphene. Such knowledge is crucial for the ultimate tailoring of electronic and optoelectronic applications.This work was supported by the Polish National Science Center (grant DEC-2011/03/B/ST3/00091), the Basque Government through the NANOMATERIALS project (grant IE05-151) under the ETORTEK Program (iNanogune), the Spanish Ministerio de Ciencia y Tecnología (grants FIS2010-21282-C02-02, FIS2012-33521 and MONACEM projects), and the University of the Basque Country (grant no. IT-366-07).Peer Reviewe

Faraday Rotation Spectroscopy of Quantum-Dot Quantum Wells

Time-resolved Faraday rotation studies of CdS/CdSe/CdS quantum-dot quantum wells have recently shown that the Faraday rotation angle exhibits several well-defined resonances as a function of probe energy close to the absorption edge. Here, we calculate the Faraday rotation angle from the eigenstates of the quantum-dot quantum well obtained with k.p theory. We show that the large number of narrow resonances with comparable spectral weight observed in experiment is not reproduced by the level scheme of a quantum-dot quantum well with perfect spherical symmetry. A simple model for broken spherical symmetry yields results in better qualitative agreement with experiment.Comment: 9 pages, 4 figure

Electron-Hole Correlations and Optical Excitonic Gaps in Quantum-Dot Quantum Wells: Tight-Binding Approach

Electron-hole correlation in quantum-dot quantum wells (QDQW's) is investigated by incorporating Coulomb and exchange interactions into an empirical tight-binding model. Sufficient electron and hole single-particle states close to the band edge are included in the configuration to achieve convergence of the first spin-singlet and triplet excitonic energies within a few meV. Coulomb shifts of about 100 meV and exchange splittings of about 1 meV are found for CdS/HgS/CdS QDQW's (4.7 nm CdS core diameter, 0.3 nm HgS well width and 0.3 nm to 1.5 nm CdS clad thickness) which have been characterized experimentally by Weller and co-workers [ D. Schooss, A. Mews, A. Eychmuller, H. Weller, Phys. Rev. B, 49, 17072 (1994)]. The optical excitonic gaps calculated for those QDQW's are in good agreement with the experiment.Comment: 3 figures, to appear in Phys.Rev.

Multiband theory of quantum-dot quantum wells: Dark excitons, bright excitons, and charge separation in heteronanostructures

Electron, hole, and exciton states of multishell CdS/HgS/CdS quantum-dot quantum well nanocrystals are determined by use of a multiband theory that includes valence-band mixing, modeled with a 6-band Luttinger-Kohn Hamiltonian, and nonparabolicity of the conduction band. The multiband theory correctly describes the recently observed dark-exciton ground state and the lowest, optically active, bright-exciton states. Charge separation in pair states is identified. Previous single-band theories could not describe these states or account for charge separation.Comment: 10 pages of ReVTex, 6 ps figures, submitted to Phys. Rev.

Octagonal defects at carbon nanotube junctions,”

We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. The junction with two octagons presents two degenerate localized states at Fermi energy ( ). The reconstructed junction has only one state near , indicating that these localized states are related to the octagonal defects. The inclusion of Coulomb interaction splits the localized states in the junction with two octagons, yielding an antiferromagnetic system