Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices.

The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems

Run-off election-based decision method for the training and inference process in an artificial neural network

Abstract Generally, the decision rule for classifying unstructured data in an artificial neural network system depends on the sequence results of an activation function determined by vector–matrix multiplication between the input bias signal and the analog synaptic weight quantity of each node in a matrix array. Although a sequence-based decision rule can efficiently extract a common feature in a large data set in a short time, it can occasionally fail to classify similar species because it does not intrinsically consider other quantitative configurations of the activation function that affect the synaptic weight update. In this work, we implemented a simple run-off election-based decision rule via an additional filter evaluation to mitigate the confusion from proximity of output activation functions, enabling the improved training and inference performance of artificial neural network system. Using the filter evaluation selected via the difference among common features of classified images, the recognition accuracy achieved for three types of shoe image data sets reached ~ 82.03%, outperforming the maximum accuracy of ~ 79.23% obtained via the sequence-based decision rule in a fully connected single layer network. This training algorithm with an independent filter can precisely supply the output class in the decision step of the fully connected network

Flash In2Se3 for neuromorphic computing

The development of next-generation in-memory and neuromorphic computing can be realized with memory transistors based on two-dimensional (2D) ferroelectric semiconductors. Among these, In2Se3 is the most interesting since it possesses ferroelectricity in 2D quintuple layers. However, synthesis of large amounts of In2Se3 crystals with the desired phase has not been previously achieved. We demonstrate here the gram-scale synthesis of α-In2Se3 crystals using a flash-within-flash Joule heating method. This approach allows the synthesis of single-phase α-In2Se3 crystals regardless of the conductance of precursors in the inner tube and enables the synthesis of gram-scale quantities of α-In2Se3 crystals. We then fabricate and use α-In2Se3 flakes as a 2D ferroelectric semiconductor FET artificial synaptic device platform. By modulating the degree of polarization in α-In2Se3 flakes according to the gate electrical pulses, these devices exhibit distinct essential synaptic behaviors. Their synaptic performances show excellent and robust reliability under repeated electrical pulses. Finally, we demonstrate that the synaptic devices achieve an estimated learning accuracy of up to ~87% for Modified National Institute of Standards and Technology patterns in a single-layer neural network system

Well-Defined Block Copolymers with Triphenylamine and Isocyanate Moieties Synthesized via Living Anionic Polymerization for Polymer-Based Resistive Memory Applications: Effect of Morphological Structures on Nonvolatile Memory Performances

The anionic block copolymerization of 4,4′-vinylphenyl-<i>N</i>,<i>N</i>-bis­(4-<i>tert</i>-butylphenyl)­benzenamine (<b>A</b>) with <i>n</i>-hexyl isocyanate (<b>B</b>) was performed using potassium naphthalenide (K-Naph) in THF at −78 and −98 °C in the presence of sodium tetraphenylborate (NaBPh₄) to afford the well-defined block copolymers for investigating the effect of morphological structures on electrical memory performances. The well-defined functional block copolymers (P<b>BAB</b>) with different block ratios had predictable molecular weights (<i>M</i>_n = 17 700–79 100 g/mol) and narrow molecular weight distributions (<i>M</i>_w/<i>M</i>_n = 1.14–1.19). It was observed from transmission electron microscopy (TEM) that the block copolymers showed different morphological structures depending on block ratios. Although all memory devices fabricated from the resulting block copolymers with different block compositions equally exhibited nonvolatile resistive switching characteristics, which are governed by the trap-controlled space-charge-limited current (SCLC) conduction mechanism and filament formation, it was found that electrical memory performances of each device varied depending on morphological structures of the block copolymer films

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices.

The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems

Highly Reliable Superhydrophobic Protection for Organic Field-Effect Transistors by Fluoroalkylsilane-Coated TiO2 Nanoparticles.

One of the long-standing problems in the field of organic electronics is their instability in an open environment, especially their poor water resistance. For the reliable operation of organic devices, introducing an effective protection layer using organo-compatible materials and processes is highly desirable. Here, we report a facile method for the depositing of an organo-compatible superhydrophobic protection layer on organic semiconductors under ambient conditions. The protection layer exhibiting excellent water-repellent and self-cleaning properties was deposited onto organic semiconductors directly using a dip-coating process in a highly fluorinated solution with fluoroalkylsilane-coated titanium dioxide (TiO2) nanoparticles. The proposed protection layer did not damage the underlying organic semiconductors and had good resistance against mechanical-, thermal-, light-stress-, and water-based threats. The protected organic field-effect transistors exhibited more-reliable electrical properties, even when exposed to strong solvents, due to its superhydrophobicity. This study provides a practical solution with which to enhance the reliability of environmentally sensitive organic semiconductor devices in the natural environment

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude. © 2016 IOP Publishing Ltd1111sciescopu