Inter-Pixel Crosstalk in Teledyne Imaging Sensors (TIS) H4RG-10 Detectors

CMOS-hybrid arrays have recently surfaced as competitive optical detectors for use in ground- and space-based astronomy. One source of error in these detectors that does not appear in more traditional CCD arrays is the inter-pixel capacitance component of crosstalk. In this paper we use a single pixel reset method to model inter-pixel capacitance (IPC). We combine this IPC model with a model for charge diffusion to estimate the total crosstalk on H4RG arrays. Finally, we compare our model results to Fe55 data obtained using an astrometric camera built to test the H4RG-B0 generation detectors.Comment: Accepted to Applied Optics 03-26-1

Laser pulse detection method and apparatus

A sensor is described for detecting the difference in phase of a pair of returned light pulse components, such as two components of a light pulse of an optical gyro. In an optic gyro, the two light components have passed in opposite directions through a coil of optical fiber, with the difference in phase of the returned light components determining the intensity of light shining on the sensor. The sensor includes a CCD (charge coupled device) that receives the pair of returned light components to generate a charge proportional to the number of photons in the received light. The amount of the charge represents the phase difference between the two light components. At a time after the transmission of the light pulse and before the expected time of arrival of the interfering light components, charge accumulating in the CCD as a result of reflections from components in the system, are repeatedly removed from the CCD, by transferring out charges in the CCD and dumping these charges

Focal Plane Alignment and Detector Characterization for the Subaru Prime Focus Spectrograph

We describe the infrastructure being developed to align and characterize the detectors for the Subaru Measurement of Images and Redshifts (SuMIRe) Prime Focus Spectrograph (PFS). PFS will employ four three-channel spectrographs with an operating wavelength range of 3800 $\AA$ to 12600 $\AA$. Each spectrograph will be comprised of two visible channels and one near infrared (NIR) channel, where each channel will use a separate Schmidt camera to image the captured spectra onto their respective detectors. In the visible channels, Hamamatsu 2k x 4k CCDs will be mounted in pairs to create a single 4k x 4k detector, while the NIR channel will use a single Teledyne 4k x 4k H4RG HgCdTe device.Comment: 16 pages, 27 figures, SPIE ATI Montreal 201

Scientific CCD technology at JPL

Charge-coupled devices (CCD's) were recognized for their potential as an imaging technology almost immediately following their conception in 1970. Twenty years later, they are firmly established as the technology of choice for visible imaging. While consumer applications of CCD's, especially the emerging home video camera market, dominated manufacturing activity, the scientific market for CCD imagers has become significant. Activity of the Jet Propulsion Laboratory and its industrial partners in the area of CCD imagers for space scientific instruments is described. Requirements for scientific imagers are significantly different from those needed for home video cameras, and are described. An imager for an instrument on the CRAF/Cassini mission is described in detail to highlight achieved levels of performance

CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector

Oral History as a Social Justice Project: Issues for the Qualitative Researcher

I am writing this to assist researchers in training and experienced researchers in understanding ways to view oral history as a social justice project. This paper will illuminate the importance of oral history in terms of enriching the knowledge base of qualitative research methods as well. Oral history provides us with an avenue of thick description, analysis, and interpretation of people’s lives through probing the past in order to understand the present .The postmodern appreciation of the study of people and their stories, those stories from persons generally on the outside or periphery of society, offer a unique opportunity to view and conduct oral history as a social justice project

Front-illuminated CCD with open pinned-phase region and two-phase transfer gate regions

A front-illuminated CCD of relative high quantum efficiency (QE) and high charge transfer efficiency (CTE) utilizes an open-phase region for receiving photons and two-phase gate regions (.phi..sub.1 and .phi..sub.2) for transferring electrons collected in one pixel to the next. The open-phase region is implanted with additional n-type elements (phosphorus) in order to increase the potential of the CCD channel in the open-phase region for collection of electrons and additionally implanted with concentrated and very shallow p-type elements (boron) to pin the surface of the n-channel in the open-phase region to OV, while gate region .phi..sub.1 and .phi..sub.2 are biased to -3.5V and driven to +10V by a two-phase transfer clock. The open pinned-phase (OPP) region thus permits two-phase transfer clocking and optimum reception of photons during the integration periods between transfer clock pulses

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths

Ultra low-noise charge coupled device

Special purpose CCD designed for ultra low-noise imaging and spectroscopy applications that require subelectron read noise floors, wherein a non-destructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are possible in this manner. In a preferred embodiment of the invention, a three-phase CCD horizontal register is used to bring a pixel charge packet to an input gate adjacent a floating gate amplifier. The charge is then repeatedly clocked back and forth between the input gate and the floating gate. Each time the charge is injected into the potential well of the floating gate, it is sensed non-destructively. The floating gate amplifier is provided with a reference voltage of a fixed value and a pre-charge gate for resetting the amplifier between charge samples to a constant gain. After the charge is repeatedly sampled a selected number of times, it is transferred by means of output gates, back into the horizontal register, where it is clocked in a conventional manner to a diffusion MOSFET amplifier. It can then be either sampled (destructively) one more time or otherwise discarded

Producing CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector