Large white organic light-emitting diode lighting panel on metal foils

Large-area top-emitting PIN structure (highly p- and n- type doped transport layers for electrons and holes and an undoped emitter layer)–organic light-emitting diode (OLED) on advanced metal foils were fabricated for lighting applications. ArcelorMittal has developed a new surface treatment on metal foils, suitable for roll-to-roll production and dedicated to large-area device integration. Both monochromatic and white devices are realized on advanced metal foils. Power efficiencies at 1000 cd/m2 of >70 lm/W (green), moreover, power efficiency of white devices of >22 lm/W are achieved. Furthermore, first large-area 60 × 60 cm white OLED sources on metal foils are presented

An overview about the use of electrical doping of charge carrier transport layers in OLEDs and further organic electronic applications

Electrical doping of organic layers is now a well established method for building highly efficient and long living OLEDs. A unique class of OLED devices called PIN-OLEDs based on redox doping technology is emerging as one key technology for OLED applications. These devices exhibit high power efficiency and long life time, which are critical parameters for commercial success. Moreover, PIN OLEDs offer high degree of freedom in choosing layer structures for optimizing the device performance for specific lighting and display applications. For example, optimizing color and power efficiency of OLEDs can be easily achieved without compromising the device operating voltage. It is worth to mention that PIN OLEDS, especially the red emitting PIN OLEDs, exhibit record breaking half life time of more than one million hours with the starting device brightness of 1000 cd/m(2). The doping technology also offers benefits to other organic electronic devices such as OTFTs and photovoltaic devices. This paper briefly discusses the improvements made on the OLED device performance such as power efficiency and lifetime using doped transport layers. Few examples of device optimization using doped layers are presented in detail. In addition, a brief discussion on performance of doped transport layers in photovoltaics is also presented