45 research outputs found
Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization
We report on tunneling magnetoresistance (TMR) experiments that demonstrate
the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d
(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie
temperature. These TMR experiments have been performed on magnetic tunnel
junctions associating Co-LSTO and Co electrodes. Extensive structural analysis
of Co-LSTO combining high-resolution transmission electron microscopy and Auger
electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer
and thus, the measured ferromagnetism and high spin polarization are intrinsic
properties of this DMOS. Our results argue for the DMOS approach with complex
oxide materials in spintronics
Suppression of the critical thickness threshold for conductivity at the LaAlO3/SrTiO3 interface
Perovskite materials engineered in epitaxial heterostructures have been intensely investigated during the last decade. The interface formed by an LaAlO3 thin film grown on top of a TiO2-terminated SrTiO3 substrate hosts a two-dimensional electronic system and has become the prototypical example of this field. Although controversy exists regarding some of its physical properties and their precise origin, it is universally found that conductivity only appears beyond an LaAlO3 thickness threshold of four unit cells. Here, we experimentally demonstrate that this critical thickness can be reduced to just one unit cell when a metallic film of cobalt is deposited on top of LaAlO3. First-principles calculations indicate that Co modifies the electrostatic boundary conditions and induces a charge transfer towards the Ti 3d bands, supporting the electrostatic origin of the electronic system at the LaAlO3/SrTiO3 interface. Our results expand the interest of this low-dimensional oxide system from in-plane to perpendicular transport and to the exploration of elastic and inelastic tunnel-type transport of (spin-polarized) carriers
Spintronics with graphene
Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-Όm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents. © Copyright 2012 Materials Research Society
Suppression of the critical thickness threshold for conductivity at the LaAlO3/SrTiO3 interface
Perovskite materials engineered in epitaxial heterostructures have been intensely investigated during the last decade. The interface formed by an LaAlO3 thin film grown on top of a TiO2-terminated SrTiO3 substrate hosts a two-dimensional electronic system and has become the prototypical example of this field. Although controversy exists regarding some of its physical properties and their precise origin, it is universally found that conductivity only appears beyond an LaAlO3 thickness threshold of four unit cells. Here, we experimentally demonstrate that this critical thickness can be reduced to just one unit cell when a metallic film of cobalt is deposited on top of LaAlO3. First-principles calculations indicate that Co modifies the electrostatic boundary conditions and induces a charge transfer towards the Ti 3d bands, supporting the electrostatic origin of the electronic system at the LaAlO3/SrTiO3 interface. Our results expand the interest of this low-dimensional oxide system from in-plane to perpendicular transport and to the exploration of elastic and inelastic tunnel-type transport of (spin-polarized) carriers
Principle of a variable capacitor based on Coulomb blockade of nanometric-size clusters
International audienceWe show how Coulomb blockade of electrons in a dispersive set of clustersembedded in the dielectric of a capacitor can be used to design a voltage tunable variablecapacitor (varactor). We calculate the variation of capacitance for typical size distribution ofthe clusters and as a function of the dielectric constants of the insulators. We also discuss thetemperature and frequency dependence of the capacitor
Self-association of benzene-1,3,5-tris(methylenephosphonic acid): Evidence of charge-assisted hydrogen bonds
International audienc
CALGO:Yb un matériau laser pour les impulsions brÚves : qualité cristalline et conductivité thermique (orale)
International audienc
Methodologie de l'examen reglementaire de surete pratique en France
SIGLEAvailable from CEN Saclay, Service de Documentation 91191 - Gif-sur-Yvette Cedex (France) / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc