Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction

The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here we demonstrate a linear-dichroic broadband photodetector with layered black phosphorus transistors, using the strong intrinsic linear dichroism arising from the in-plane optical anisotropy with respect to the atom-buckled direction, which is polarization sensitive over a broad bandwidth from 400 nm to 3750 nm. Especially, a perpendicular build-in electric field induced by gating in black phosphorus transistors can spatially separate the photo-generated electrons and holes in the channel, effectively reducing their recombination rate, and thus enhancing the efficiency and performance for linear dichroism photodetection. This provides new functionality using anisotropic layered black phosphorus, thereby enabling novel optical and optoelectronic device applications.Comment: 18 pages, 5 figures in Nature Nanotechnology 201

Optical Properties of Noble Metal Nanoparticles in Dielectric Thin Films

(Statement of Responsibility) by Robin Jacobs-Gedrim(Thesis) Thesis (B.A.) -- New College of Florida, 2010(Electronic Access) RESTRICTED TO NCF STUDENTS, STAFF, FACULTY, AND ON-CAMPUS USE(Bibliography) Includes bibliographical references.(Source of Description) This bibliographic record is available under the Creative Commons CC0 public domain dedication. The New College of Florida, as creator of this bibliographic record, has waived all rights to it worldwide under copyright law, including all related and neighboring rights, to the extent allowed by law.(Local) Faculty Sponsor: Sendova, Marian

Rapid optical determination of topological insulator nanoplate thickness and oxidation

The stability of 2D antimony telluride (Sb2Te3) nanoplates in ambient conditions is elucidated. These materials exhibit an anisotropic oxidation mode, and CVD synthesized samples oxidize at a much faster rate than exfoliated samples investigated in previous studies. Optical measurement techniques are introduced to rapidly measure the oxidation modes and thickness of 2D materials. Auger characterization were conducted to confirm that oxygen replaces tellurium as opposed to antimony under ambient conditions. No surface morphology evolution was detected in AFM before and after exposure to air. These techniques were employed to determine the origin of the thickness dependent color change effect in Sb2Te3. It is concluded that this effect is a combination of refractive index change due to oxidation and Fresnel effects

Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides

It is well established that defects strongly influence properties in two-dimensional materials. For graphene, atomic defects activate the Raman-active centrosymmetric A_1g ring-breathing mode known as the D-peak. The relative intensity of this D-peak compared to the G-band peak is the most widely accepted measure of the quality of graphene films. However, no such metric exists for monolayer semiconducting transition metal dichalcogenides such as WS₂ or MoS₂. Here we intentionally create atomic-scale defects in the hexagonal lattice of pristine WS₂ and MoS₂ monolayers using plasma treatments and study the evolution of their Raman and photoluminescence spectra. High-resolution transmission electron microscopy confirms plasma-induced creation of atomic-scale point defects in the monolayer sheets. We find that while the Raman spectra of semiconducting transition metal dichalcogenides (at 532 nm excitation) are insensitive to defects, their photoluminescence reveals a distinct defect-related spectral feature located ∼0.1 eV below the neutral free A-exciton peak. This peak originates from defect-bound neutral excitons and intensifies as the two-dimensional (2D) sheet is made more defective. This spectral feature is observable in air under ambient conditions (room temperature and atmospheric pressure), which allows for a relatively simple way to determine the defectiveness of 2D semiconducting nanosheets. Controlled defect creation could also enable tailoring of the optical properties of these materials in optoelectronic device applications