Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

Non-polar (11-20) InGaN quantum dots (QDs) have been grown using a modified droplet epitaxy method by metal-organic vapour phase epitaxy on top of a 15-period AlN/GaN distributed Bragg reflector (DBR) on a-plane GaN pseudo-substrate prepared by epitaxial lateral overgrowth (ELOG), in which the QDs are located at the centre of a ca. 180 nm GaN layer. The AlN/GaN DBR has shown a peak reflectivity of ~80% at a wavelength of ~454 nm with a 49 nm wide, flat stop-band. Variations in layer thicknesses observed by cross-sectional scanning transmission electron microscopy have been identified as the main source of degradation of the DBR reflectivity. The presence of trenches due to incomplete coalescence of the ELOG template and the formation of cracks due to relaxation of tensile strain during the DBR growth may distort the DBR and further reduce the reflectivity. The DBR top surface is very smooth and does not have a detrimental effect on the subsequent growth of QDs. Enhanced single QD emission at 20 K was observed in cathodoluminescence.This work has been funded by the EPSRC (Grant No. EP/H047816/1 and EP/J001627/1).This is the final version of the article. It first appeared from Elsevier via http://dx.doi.org/10.1016/j.spmi.2015.10.00

Community psychological and behavioral responses through the first wave of the 2009 influenza A(H1N1) pandemic in Hong Kong

Background: Little is known about the community psychological and behavioral responses to influenza pandemics. Methods: Using random digit dialing, we sampled 12,965 Hong Kong residents in 13 cross-sectional telephone surveys between April and November 2009, covering the entire first wave of the 2009 influenza A(H1N1) pandemic. We examined trends in anxiety, risk perception, knowledge on modes of transmission, and preventive behaviors. Results: Respondents reported low anxiety levels throughout the epidemic. Perceived susceptibility to infection and perceived severity of H1N1 were initially high but declined early in the epidemic and remained stable thereafter. As the epidemic grew, knowledge on modes of transmission did not improve, the adoption of hygiene measures and use of face masks did not change, and social distancing declined. Greater anxiety was associated with lower reported use of hygiene measures but greater social distancing. Knowledge that H1N1 could be spread by indirect contact was associated with greater use of hygiene measures and social distancing. Conclusions: The lack of substantial change in preventive measures or knowledge about the modes of H1N1 transmission in the general population suggests that community mitigation measures played little role in mitigating the impact of the first wave of 2009 influenza A(H1N1) pandemic in Hong Kong. © 2010 by the Infectious Diseases Society of America. All rights reserved.published_or_final_versio

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.This work was funded by the EPSRC (Grant Nos. EP/J003603/1 and EP/H047816/1).This is the final published version. It first appeared at http://scitation.aip.org/content/aip/journal/aplmater/2/12/10.1063/1.4904068

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage. Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission electron microscopy, we investigate the origins of leakage paths and show that they result from the preferential incorporation of oxygen impurities on the side wall facets of the inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant increase in the breakdown voltage can be achieved even in much thinner buffer layer structures. These results demonstrate the importance of controlling the morphology of the high electron mobility transistor buffer layer as even at a very low density the leakage paths identified would provide leakage paths in large area devices.This work was funded by the Engineering and Physical Sciences Research Council under Grant Code Nos. EP/K014471/1 and EP/N01202X/1 and the European Research Council under the European Community's Seventh Framework Programme Grant Agreement No. 279361 (MACONS)

Defects in III-nitride microdisk cavities

Nitride microcavities offer an exceptional platform for the investigation of light-matter interactions as well as the development of devices such as high efficiency light emitting diodes (LEDs) and low-threshold nanolasers. Microdisk geometries in particular are attractive for low-threshold lasing applications due to their ability to support high finesse whispering gallery modes (WGMs) and small modal volumes. In this article we review the effect of defects on the properties of nitride microdisk cavities fabricated using photoelectrochemical (PEC) etching of an InGaN sacrificial superlattice (SSL). Threading dislocations originating from either the original GaN pseudosubstrate are shown to hinder the undercutting of microdisk cavities during the photoelectric chemical (PEC) etching process resulting in whiskers of unetched material on the underside of microdisks. The unetched whiskers provide a pathway for light to escape, reducing microdisk Q-factor if located in the region occupied by the WGMs. Additionally, dislocations can affect the spectral stability of quantum dot emitters, thus hindering their effective integration in microdisk cavities. Though dislocations are clearly undesirable, the limiting factor on nitride microdisk Q-factor is expected to be internal absorption, indicating that the further optimisation of nitride microdisk cavities must incorporate both the elimination of dislocations and careful tailoring of the active region emission wavelength and background doping levels.The original research shown in this article has been funded by the European Research Council under the European Community’s Seventh Framework Programme (FP7/2007-2013)/ ERC grant agreement no. 279361 (MACONS). RAO acknowledges the Royal Academy of Engineering Leverhulme Trust Senior Research Fellowship scheme.This is the author accepted manuscript. The final version is available from the Institute of Physics via https://doi.org/10.1088/1361-6641/32/3/03300

Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography

Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering.The European Research Council has provided financial support under the European Community’s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 279361 (MACONS). This work was also funded in part by the EPSRC (Grant Nos. EP/H047816/1, EP/H0495331 and EP/J003603/1).This is the author accepted manuscript. The final version is available via AIP at http://scitation.aip.org/content/aip/journal/apl/106/7/10.1063/1.4909514

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Nano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to the electron beam for energies between 80 and 200 keV. Measurements of the CL intensity over time show an exponential decline in intensity, which we propose is due to the formation of nitrogen Frenkel defects. The measured CL damage decreases with reductions in the electron accelerating voltage and we suggest that the electron induced structural damage may be suppressed below the proposed damage threshold. The electron beam induced damage leads to a non-radiative region that extends over the measured minority carrier diffusion length. Nano-CL may thus serve as a powerful technique to study III-nitride optoelectronics.This work was carried out with the support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/NO17927/1 and EP/J003603/1. R. Oliver acknowledges funding from the European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013) ERC grant agreement number 279361 (MACONS) and the from the Royal Academy of Engineers/Leverhulme Trust senior research fellowship

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.The European Research Council has provided financial support under the European Community’s Seventh Framework Programme/ ERC grant agreement no. 279361 (MACONS).This is the author accepted manuscript. The final version is available from Elsevier via http://dx.doi.org/10.1016/j.spmi.2016.03.03

Mapping Materials and Molecules

The visualization of data is indispensable in scientific research, from the early stages when human insight forms to the final step of communicating results. In computational physics, chemistry and materials science, it can be as simple as making a scatter plot or as straightforward as looking through the snapshots of atomic positions manually. However, as a result of the “big data” revolution, these conventional approaches are often inadequate. The widespread adoption of high-throughput computation for materials discovery and the associated community-wide repositories have given rise to data sets that contain an enormous number of compounds and atomic configurations. A typical data set contains thousands to millions of atomic structures, along with a diverse range of properties such as formation energies, band gaps, or bioactivities. It would thus be desirable to have a data-driven and automated framework for visualizing and analyzing such structural data sets. The key idea is to construct a low-dimensional representation of the data, which facilitates navigation, reveals underlying patterns, and helps to identify data points with unusual attributes. Such data-intensive maps, often employing machine learning methods, are appearing more and more frequently in the literature. However, to the wider community, it is not always transparent how these maps are made and how they should be interpreted. Furthermore, while these maps undoubtedly serve a decorative purpose in academic publications, it is not always apparent what extra information can be garnered from reading or making them. This Account attempts to answer such questions. We start with a concise summary of the theory of representing chemical environments, followed by the introduction of a simple yet practical conceptual approach for generating structure maps in a generic and automated manner. Such analysis and mapping is made nearly effortless by employing the newly developed software tool ASAP. To showcase the applicability to a wide variety of systems in chemistry and materials science, we provide several illustrative examples, including crystalline and amorphous materials, interfaces, and organic molecules. In these examples, the maps not only help to sift through large data sets but also reveal hidden patterns that could be easily missed using conventional analyses. The explosion in the amount of computed information in chemistry and materials science has made visualization into a science in itself. Not only have we benefited from exploiting these visualization methods in previous works, we also believe that the automated mapping of data sets will in turn stimulate further creativity and exploration, as well as ultimately feed back into future advances in the respective fields