21 research outputs found
Self-Assembly of Atomically Thin Chiral Copper Heterostructures Templated by Black Phosphorus
The fabrication of 2D systems for electronic devices is not straightforward, with topâdown lowâyield methods often employed leading to irregular nanostructures and lower quality devices. Here, a simple and reproducible method to trigger selfâassembly of arrays of high aspectâratio chiral copper heterostructures templated by the structural anisotropy in black phosphorus (BP) nanosheets is presented. Using quantitative atomic resolution aberrationâcorrected scanning transmission electron microscopy imaging, in situ heating transmission electron microscopy and electron energyâloss spectroscopy arrays of heterostructures forming at speeds exceeding 100 nm sâ1 and displaying longârange order over micrometers are observed. The controlled instigation of the selfâassembly of the Cu heterostructures embedded in BP is achieved using conventional electron beam lithography combined with site specific placement of Cu nanoparticles. Density functional theory calculations are used to investigate the atomic structure and suggest a metallic nature of the Cu heterostructures grown in BP. The findings of this new hybrid material with unique dimensionality, chirality, and metallic nature and its triggered selfâassembly open new and exciting opportunities for next generation, selfâassembling devices
Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4
An extensive theoretical study is performed for wide bandgap crystalline
oxides and nitrides, namely, SiO_{2}, GeO_{2}, Al_{2}O_{3}, Si_{3}N_{4}, and
Ge_{3}N_{4}. Their important polymorphs are considered which are for SiO_{2}:
-quartz, - and -cristobalite and stishovite, for
GeO_{2}: -quartz, and rutile, for Al_{2}O_{3}: -phase, for
Si_{3}N_{4} and Ge_{3}N_{4}: - and -phases. This work
constitutes a comprehensive account of both electronic structure and the
elastic properties of these important insulating oxides and nitrides obtained
with high accuracy based on density functional theory within the local density
approximation. Two different norm-conserving \textit{ab initio}
pseudopotentials have been tested which agree in all respects with the only
exception arising for the elastic properties of rutile GeO_{2}. The agreement
with experimental values, when available, are seen to be highly satisfactory.
The uniformity and the well convergence of this approach enables an unbiased
assessment of important physical parameters within each material and among
different insulating oxide and nitrides. The computed static electric
susceptibilities are observed to display a strong correlation with their mass
densities. There is a marked discrepancy between the considered oxides and
nitrides with the latter having sudden increase of density of states away from
the respective band edges. This is expected to give rise to excessive carrier
scattering which can practically preclude bulk impact ionization process in
Si_{3}N_{4} and Ge_{3}N_{4}.Comment: Published version, 10 pages, 8 figure