Molecular states in a one-electron double quantum dot

The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric ground state and the antisymmetric excited state of the double well potential by means of differential conductance measurements. A sizable magnetic field, perpendicular to the two-dimensional electron gas, reduces the extent of the electronic wave-function and thereby decreases the tunnel coupling. A perpendicular magnetic field also modulates the orbital excitation energies in each individual dot. By additionally tuning the asymmetry of the double well potential we can align the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot. This results in a second anticrossing with a much larger tunnel splitting than the anticrossing involving the two electronic ground states.Comment: 4 pages, 4 figures; EP2DS-16 conference contributio

Collective Modes of Soliton-Lattice States in Double-Quantum-Well Systems

In strong perpendicular magnetic fields double-quantum-well systems can sometimes occur in unusual broken symmetry states which have interwell phase coherence in the absence of interwell hopping. When hopping is present in such systems and the magnetic field is tilted away from the normal to the quantum well planes, a related soliton-lattice state can occur which has kinks in the dependence of the relative phase between electrons in opposite layers on the coordinate perpendicular to the in-plane component of the magnetic field. In this article we evaluate the collective modes of this soliton-lattice state in the generalized random-phase aproximation. We find that, in addition to the Goldstone modes associated with the broken translational symmetry of the soliton-lattice state, higher energy collective modes occur which are closely related to the Goldstone modes present in the spontaneously phase-coherent state. We study the evolution of these collective modes as a function of the strength of the in-plane magnetic field and comment on the possibility of using the in-plane field to generate a finite wave probe of the spontaneously phase-coherent state.Comment: REVTEX, 37 pages (text) and 15 uuencoded postscript figure

Nonequilibrium phenomena in adjacent electrically isolated nanostructures

We report on nonequilibrium interaction phenomena between adjacent but electrostatically separated nanostructures in GaAs. A current flowing in one externally biased nanostructure causes an excitation of electrons in a circuit of a second nanostructure. As a result we observe a dc current generated in the unbiased second nanostructure. The results can be qualitatively explained in terms of acoustic phonon based energy transfer between the two mutually isolated circuits.Comment: EP2DS-2007 proceedings; as publishe

Intersubband energies in GaAs-Ga1-xAlxAs heterojunctions

Contains fulltext : 145268.pdf (publisher's version ) (Open Access

Top-Gate Einzel-Elektronen-Transistoren in Si/SiGe Heterostrukturen Schlussbericht

Available from TIB Hannover: F99B1198+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung (BMBF), Bonn (Germany)DEGerman