Molecular dynamics simulation of brittle fracture in silicon

The fracture process involves converting potential energy from a strained body into surface energy, thermal energy, and the energy needed to create lattice defects. In dynamic fracture, energy is also initially converted into kinetic energy. This paper uses molecular dynamics (MD) to simulate brittle frcture in silicon and determine how energy is converted from potential energy (strain energy) into other forms

Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed

The correlation of indentation size effect experiments with pyramidal and spherical indenters

Experiments were conducted in annealed iridium using pyramidal and spherical indenters over a wide range of load. For a Berkovich pyramidal indenter, the hardness increased with decreasing depth of penetration. However, for spherical indenters, hardness increased with decreasing sphere radius. Based on the number of geometrically necessary dislocations generated during indentation, a theory that takes into account the work hardening differences between pyramidal and spherical indenters is developed to correlate the indentation size effects measured with the two indenters. The experimental results verify the theoretical correlation