71 research outputs found
The Essentials of NY Mental Health Law: A Straightforward Guide for Clinicians of All Disciplines
Table of Contents onlyhttps://digitalcommons.nyls.edu/fac_books/1122/thumbnail.jp
Effect of logic family on radiated emissions from digital circuits
Radiated emissions were measured for simple digital circuits designed to operate with various logic families. Emissions in the near and far field were found to depend both on the circuit layout and the choice of logic family. However, the difference in peak emissions between any two logic families was found to be independent of circuit layout. The greatest difference in peak emissions was between high-speed 74ACT logic and low-speed 4000 CMOS logic devices, with a mean value of approximately 20 dB. Emissions from a more complex circuit were compared with the measurements on simple loop circuits. Test circuits were used to measure the propagation delay, the rise and fall times, the maximum operating frequency and the transient switching currents between two successive logic gates for each logic family. Empirical formulas have been derived that relate relative peak emissions to these switching parameters. It is hoped that these will assist designers to assess the effect of choice of logic family on electromagnetic compatibility
International Trade and Investment Sanctions
The purpose of this paper is to clarify the theory of international economic sanctions and to provide estimates of the short-run economic impact on South Africa of externally imposed reductions of the imports and capital flows into that country. A macroeconomic picture of South Africa's "dependence" is drawn, and the economy's vulnerability in the short run is seen to be in its capacity to import, not in exports or capital flows. Trade and capital sanctions most clearly damage South Afnca's growth potential; the short-run impact is harder to quantify. A static linear programming model of the South African economy is constructed in an attempt at this quantification. This model estimates that small sanctions would have small impact—i.e., if imports were reduced by less than one-fourth, GDP would be cut by only about one half as large a percentage as imports. Larger import reductions cause greater damage. If imports were to be cut in half, not only would GDP be seriously reduced but massive unemployment and relocation of white labor would occur.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/68182/2/10.1177_002200277902300401.pd
Análise da micobiota associada à entomofauna em rações a granel para animais domésticos
Cardiovascular development: towards biomedical applicability: Regulation of cardiomyocyte differentiation of embryonic stem cells by extracellular signalling
Investigating the signalling pathways that regulate heart development is essential if stem cells are to become an effective source of cardiomyocytes that can be used for studying cardiac physiology and pharmacology and eventually developing cell-based therapies for heart repair. Here, we briefly describe current understanding of heart development in vertebrates and review the signalling pathways thought to be involved in cardiomyogenesis in multiple species. We discuss how this might be applied to stem cells currently thought to have cardiomyogenic potential by considering the factors relevant for each differentiation step from the undifferentiated cell to nascent mesoderm, cardiac progenitors and finally a fully determined cardiomyocyte. We focus particularly on how this is being applied to human embryonic stem cells and provide recent examples from both our own work and that of others
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ELECTRONIC PROPERTIES OF COMPLEX CRYSTALLINE AND AMORPHOUS PHASES OF Ge AND Si. II. BAND STRUCTURE AND OPTICAL PROPERTIES
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ELECTRONIC PROPERTIES OF COMPLEX CRYSTALLINE AND AMORPHOUS PHASES OF Ge AND Si. I. DENSITY OF STATES AND BAND STRUCTURE
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EFFECTS OP DISORDER OH THE ELECTRONIC DENSITY OF STATES OP III-V COMPOUNDS
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INTRINSIC SURFACE STATES OF (110) SURFACES OF GROUP IV AND III-V SEMICONDUCTORS
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NEW INSIGHT INTO THE OPTICAL PROPERTIES OF AMORPHOUS Ge AND Si
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