Analysing trimethylaluminum infiltration intopolymer brushes using a scalable area selectivevapor phase process

Developing vapor phase infiltration (VPI) processes for area selective polymer nanopatterning requires substantial advancement in understanding precursor infiltration, precursor–polymer interaction and process parameters. In this work, infiltration receptive poly(2-vinylpyridine) (P2VP) and poly(4-vinylpyridine) (P4VP) brushes were exposed to a trimethylaluminum (TMA) VPI process and compared toa non-receptive polystyrene (PS) system. The interaction that takes place between TMA and P2VP/P4VPwas analysed in detail and we report on notable advantages in the use of P4VP, arising from the difference in position of the pyridinic nitrogen. The VPI process was performed in a commercial atomic layer deposition reactor and the effects of the fundamental process parameters on the three polymer brushes were investigated to ensure optimal area selectivity. In situX-ray photoelectron spectroscopy (XPS) measurements were supported by grazing angle Fourier transform infrared spectroscopy (GA-FTIR)and hard X-ray photoelectron spectroscopy (HAXPES). The report identifies several important factors when developing a VPI process to ensure area selectivity, while also demonstrating the use of novel pyridine containing polymers for VPI area selective purposes

Growth chemistry and electrical performance of ultrathin alumina formed by area selective vapor phase infiltration

The growth chemistry and electrical performance of 5 nm alumina films, fabricated via the area-selective vapor phase infiltration (VPI) of trimethylaluminum into poly(2-vinylpyridine), are compared to a conventional plasma enhanced atomic layer deposition (PEALD) process. The chemical properties are assessed via energy dispersive X-ray spectroscopy and hard X-ray photoelectron spectroscopy measurements, while current – voltage dielectric breakdown and capacitance – voltage analysis is undertaken to provide electrical information of these films for the first time. The success and challenges in dielectric formation via polymer VPI, the compatibility of pyridine in such a role, and the ability of the unique and rapid grafting-to polymer brush method in forming coherent metal oxides is evaluated. It was found that VPI made alumina fabricated at temperatures between 200 and 250 °C had a consistent breakdown electrical field, with the best performing devices possessing a к value of 5.9. The results indicate that the VPI approach allows for the creation of alumina films that display dielectric properties of a comparable quality to conventional PEALD grown films

Bond Lengths and Elasticity in Strained-Layer Semiconductors

The x-ray standing wave (XSW) and extended x-ray absorption fine structure (EXAFS) techniques have determined the strain and bond distortions in an InAs monolayer embedded in GaAs(001). A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented

THE SILICON/GERMANIUM (111) INTERFACE : THE ONSET OF EPITAXY

No abstract availabl

Separated Anomalous Scattering Amplitudes for the Inequivalent Cu Sites in YBa2Cu3O7-δ using DAFS

The separate complex resonant scattering amplitudes for the two inequivalent Cu sites in YBa2Cu3O7-δ have been determined using diffraction anomalous fine structure (DAFS). The combined amplitudes Δf(Q,E) for eight specular (00l) reflections were isolated from the measured intensity using the iterative dispersion algorithm of Pickering, et al., modified to accommodate contributions to the imaginary part of the scattering amplitude from the heavy Ba and Y atoms. The individual site response functions f''(E) were solved by singular value decomposition of the matrix of crystallographic coefficients and applying the inverse matrix to Δf(Q,E) at each value of energy. For comparison, a second set of coefficients was obtained by simultaneously fitting the DAFS fine structure functions X(Q,E) using the computer program FEFFIT under a set of constraints. The X(Q,E) were modeled as linear combinations of the two Cu site X(Q,E) functions using a kinematic structure factor model with Q as the independent variable and theoretical X(Q) from FEFF7

Design and performance of the ALS double-crystal monochromator

A new ``Cowan type`` double-crystal monochromator, based on the boomerang design used at NSLS beamline X-24A, has been developed for beamline 9.3.1 at the ALS, a windowless UHV beamline covering the 1-6 keV photon-energy range. Beamline 9.3.1 is designed to simultaneously achieve the goals of high energy resolution, high flux, and high brightness at the sample. The mechanical design has been simplified, and recent developments in technology have been included. Measured mechanical precision of the monochromator shows significant improvement over existing designs. In tests with x-rays at NSLS beamline X-A, maximum deviations in the intensity of monochromatic light were just 7% during scans of several hundred eV in the vicinity of the Cr K edge (6 keV) with the monochromator operating without intensity feedback. Such precision is essential because of the high brightness of the ALS radiation and the overall length of beamline 9.3.1 (26 m)

Design and Performance of the ALS Double-Crystal Monochromator

A new ``Cowan type`` double-crystal monochromator, based on the boomerang design used at NSLS beamline X-24A, has been developed for beamline 9.3.1 at the ALS, a windowless UHV beamline covering the 1-6 keV photon-energy range. Beamline 9.3.1 is designed to simultaneously achieve the goals of high energy resolution, high flux, and high brightness at the sample. The mechanical design has been simplified, and recent developments in technology have been included. Measured mechanical precision of the monochromator shows significant improvement over existing designs. In tests with x-rays at NSLS beamline X-A, maximum deviations in the intensity of monochromatic light were just 7% during scans of several hundred eV in the vicinity of the Cr K edge (6 keV) with the monochromator operating without intensity feedback. Such precision is essential because of the high brightness of the ALS radiation and the overall length of beamline 9.3.1 (26 m)

Subtle local structural variations in oxygen deficient niobium germanate thin film glasses as revealed by x-ray absorption spectroscopy

XAFS16, Karlsruhe, Germany, 23 - 28 August 2015; http://www.xafs16.org/The local electronic and crystal structure of Niobium-lead-germanate, Nb2O5-PbO-GeO2 (NPG), glass thin films on silicon substrates were probed by XANES and EXAFS. NPG glasses are promising candidates for applications in nonlinear optical devices because they exhibit interesting optical characteristics such as high nonlinear third order optical susceptibility. In this work NPG glasses were prepared with pulsed laser deposition method with varying oxygen partial pressure to induce thin films with different oxygen stoichiometry. Previously, it was shown that oxygen stoichiometry has a very important effect to produce unusual high optical susceptibility. Detailed EXAFS and XANES analyses in a series of NPG thin films revealed the subtle variations in the local environment around Nb atoms and the Nb oxidation states caused by oxygen deficiencies.Peer Reviewe