Behavioral simulation and synthesis of biological neuron systems using synthesizable VHDL

Neurons are complex biological entities which form the basis of nervous systems. Insight can be gained into neuron behavior through the use of computer models and as a result many such models have been developed. However, there exists a trade-off between biological accuracy and simulation time with the most realistic results requiring extensive computation. To address this issue, a novel approach is described in this paper that allows complex models of real biological systems to be simulated at a speed greater than real time and with excellent accuracy. The approach is based on a specially developed neuron model VHDL library which allows complex neuron systems to be implemented on field programmable gate array (FPGA) hardware. The locomotion system of the nematode Caenorhabditis elegans is used as a case study and the measured results show that the real time FPGA based implementation performs 288 times faster than traditional ModelSim simulations for the same accuracy

A new crystal form of penicillin acylase from Escherichia coli

A new crystal form of penicillin acylase (penicillin amidohydrolase, E.C. 3.5.1.11) from Escherichia coli W (ATCC 11105) is reported. The crystals were grown using a combination of hanging-drop and streak-seeding methods. The crystals are in the monoclinic space group P2(1) with cell dimensions a = 51.52, b = 131.95, c = 64.43 Angstrom, beta = 106.12 degrees. There is one heterodimer in the asymmetric unit (Vm = 2.45 Angstrom(3) Da(-1)) and the solvent content is 49%. Preliminary data have been collected to d(min) = 2.7 Angstrom using a MAR Research image plate and a rotating-anode X-ray source. Subsequent experiments show diffraction beyond 1.3 Angstrom at a synchrotron radiation source

Is voice therapy an effective treatment for dysphonia? A randomised controlled trial

OBJECTIVES: To assess the overall efficacy of voice therapy for dysphonia. DESIGN: Single blind randomised controlled trial. SETTING: Outpatient clinic in a teaching hospital. Participants: 204 outpatients aged 17-87 with a primary symptom of persistent hoarseness for at least two months. INTERVENTIONS: After baseline assessments, patients were randomised to six weeks of either voice therapy or no treatment. Assessments were repeated at six weeks on the 145 (71%) patients who continued to this stage and at 12-14 weeks on the 133 (65%) patients who completed the study. The assessments at the three time points for the 70 patients who completed treatment and the 63 patients in the group given no treatment were compared. MAIN OUTCOME MEASURES: Ratings of laryngeal features, Buffalo voice profile, amplitude and pitch perturbation, voice profile questionnaire, hospital anxiety and depression scale, clinical interview schedule, SF-36. RESULTS: Voice therapy improved voice quality as assessed by rating by patients (P=0.001) and rating by observer (P<0.001). The treatment effects for these two outcomes were 4.1 (95% confidence interval 1.7 to 6.6) points and 0.82 (0.50 to 1.13) points. Amplitude perturbation showed improvement at six weeks (P=0.005) but not on completion of the study. Patients with dysphonia had appreciable psychological distress and lower quality of life than controls, but voice therapy had no significant impact on either of these variables. CONCLUSION: Voice therapy is effective in improving voice quality as assessed by self rated and observer rated methods

Dispersion strengthening in vanadium microalloyed steels processed by simulated thin slab casting and direct charging: Part I - Processing parameters, mechanical properties and microstructure

A study simulating thin slab continuous casting followed by direct charging into an equalisation furnace has been undertaken based on six low carbon (0.06wt-%) vanadium microalloyed steels. Mechanical and impact test data showed properties were similar or better than those obtained from similar microalloyed conventional thick cast as rolled slabs. The dispersion plus dislocation strengthening was estimated to be in the range 80-250MPa.A detailed TEM/EELS analysis of the dispersion sized sub-15nm particles showed that in all the steels, they were essentially nitrides with little crystalline carbon detected. In the Steels V-Nb, V-Ti and V-Nb-Ti, mixed transition metal nitrides were present. Modelling of equilibrium precipitates in these steels, based on a modified version of ChemSage, predicted that only vanadium rich nitrides would precipitate in austenite but that the C/N ratio would increase through the two phase field and in ferrite. The experimental analytical data clearly points to the thin slab direct charging process, which has substantially higher cooling rates than conventional casting, nucleating non-equilibrium particles in ferrite which are close to stoichiometric nitrides. These did not coarsen during the final stages of processing, but retained their highly stable average size of ~7nm resulting in substantial dispersion strengthening. The results are considered in conjunction with pertinent published literature

Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures

Test devices have been fabricated on two specially grown GaAs/AlGaAs wafers with 10 nm thick gate dielectrics composed of either Ga<sub>2</sub>O<sub>3</sub> or a stack of Ga<sub>2</sub>O<sub>3</sub> and Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub>. The wafers have two GaAs transport channels either side of an AlGaAs barrier containing a Si delta-doping layer. Temperature dependent capacitance-voltage (C-V) and current-voltage (I-V) studies have been performed at temperatures between 10 and 300 K. Bias cooling experiments reveal the presence of DX centers in both wafers. Both wafers show a forward bias gate leakage that is by a single activated channel at higher temperatures and by tunneling at lower temperatures. When Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> is included in a stack with 1 nm of Ga<sub>2</sub>O<sub>3</sub> at the interface, the gate leakage is greatly reduced due to the larger band gap of the Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> layer. The different band gaps of the two oxides result in a difference in the gate voltage at the onset of leakage of ~3 V. However, the inclusion of Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> in the gate insulator introduces many oxide states (≤4.70Ã�Â�10<sup>12</sup> cm<sup>âÂ�Â�2</sup>). Transmission electron microscope images of the interface region show that the growth of a Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> layer on Ga<sub>2</sub>O<sub>3</sub> disturbs the well ordered Ga<sub>2</sub>O<sub>3</sub>/GaAs interface. We therefore conclude that while including Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub> in a dielectric stack with Ga<sub>2</sub>O<sub>3</sub> is necessary for use in device applications, the inclusion of Gd decreases the quality of the Ga<sub>2</sub>O<sub>3</sub>/GaAs interface and near interface region by introducing roughness and a large number of defect states

Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications

No abstract available

Dimensionality of spin modulations in 1/8-doped lanthanum cuprates from the perspective of NQR and muSR experiments

We investigate the dimensionality of inhomogeneous spin modulation patterns in the cuprate family of high-temperature superconductors with particular focus on 1/8-doped lanthanum cuprates. We compare one-dimensional stripe modulation pattern with two-dimensional checkerboard of spin vortices in the context of nuclear quadrupole resonance(NQR) and muon spin rotation(muSR) experiments. In addition, we also consider the third pattern, a two-dimensional superposition of spin spirals. Overall, we have found that none of the above patterns leads to a consistent interpretation of the two types of experiments considered. This, in particular, implies that the spin vortex checkerboard cannot be ruled out on the basis of available NQR/muSR experimental results.Comment: 6 pages, 2 figure