On the nature of X-Ray Flashes

We discuss the origin of X-Ray Flashes (XRFs), a recently discovered class of Gamma-Ray Bursts (GRBs). Using a simplified model for internal shocks we check if XRFs can be intrinsically soft due to some specific values of the parameters describing the relativistic outflow emerging from the central engine. We generate a large number of synthetic events and find that XRFs are obtained when the contrast Gamma_max/Gamma_min of the Lorentz factor distribution is small while the average Lorentz factor Gamma is large. A few XRFs may be GRBs at large redshifts but we exclude this possibility for the bulk of the population. If outflows with a small contrast are commonly produced, even a large population of XRFs could be explained. If conversely the Lorentz factor distribution within the wind is broad, one should then rely on extrinsic causes, such as viewing angle effects or high redshift.Comment: 9 pages, 8 figures, to appear in A&

The E-peak distribution of the GRBs detected by HETE FREGATE instrument

The FREGATE gamma ray detector of HETE-2 is sensitive to photons between 6 and 400 keV. This sensitivity range, extended towards low energies, allows us to explore the emission of GRBs in hard X-rays. We fit the spectra of 23 GRBs with Band's spectral function in order to derive the distribution of their peak energies (E-peak). This distribution is then compared with the E-peak distributions measured by BATSE and GINGA.Comment: 3 pages, Woods Hole Proceeding

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.Comment: 6 pages, 4 figures, supplementary information (3 pages, 4 figures

Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications

The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been proposed based on emerging memories, such as OxRAM, that rely mainly on area hungry, one transistor (1T) one OxRAM (1R) bit-cell. To tackle this area issue, while keeping the programming control provided by 1T1R bit-cell, we propose to combine gate-all-around stacked junctionless nanowires (1JL) and OxRAM (1R) technology to create a 3-D memory pillar with ultrahigh density. Nanowire junctionless transistors have been fabricated, characterized, and simulated to define current conditions for the whole pillar. Finally, based on Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, we demonstrated successfully scouting logic operations up to three-pillar layers, with one operand per layer