Probing the Electronic Structure of Bilayer Graphene by Raman Scattering

The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.Comment: 4 pages, 4 figure

Quasiexcitons in Incompressible Quantum Liquids

Photoluminescence (PL) has been used to study two-dimensional incompressible electron liquids in high magnetic fields for nearly two decades. However, some of the observed anomalies coincident with the fractional quantum Hall effect are still unexplained. We show that emission in these systems occurs from fractionally charged "quasiexciton" states formed from trions correlated with the surrounding electrons. Their binding and recombination depend on the state of both the electron liquid and the involved trion, predicting discontinuities in PL and sensitivity to sample parameters.Comment: 4 pages, 4 figure

NEW ALXGA1-XAS RELATED DEEP LUMINESCENCE OBSERVED IN MODULATION-DOPED QUANTUM-WELLS

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Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching

In this study, laser-treated polycrystalline Si (pc-Si) wafers, fabricated by wire sawing of hot-pressed ingots sintered from Si powder, have been investigated. As-cut wafers and those with high-quality thin Si layers deposited on top of them by e-beam have been subjected to laser irradiation to clarify typical trends of structural modifications caused by laser treatments. Moreover, possibility to use laser-treated Si powder-based substrates for fabrication of advanced Si structures has been analysed. It is established that (i) Si powder-based wafers with thicknesses 180 μm can be fully (from the front to back side) or partly (subsurface region) remelted by a diode laser and grain sizes in laser-treated regions can be increased; (ii) a high-quality top layer can be fabricated by crystallization of an additional a-Si layer deposited by e-beam evaporation on top of the pc-Si; and (iii) silicon nanowires can be formed by metal-assisted wet chemical etching (MAWCE) of polished Si powder-based wafers and as-cut wafers irradiated with medium laser power, while a surface texturing on the as-cut pc-Si wafers occur, and no nanowires can form in the region subject to a liquid phase crystallization (LPC) caused by high-power laser treatments

Dependence of exciton transition energy of single-walled carbon nanotubes on surrounding dielectric materials

We theoretically investigate the dependence of exciton transition energies on dielectric constant of surrounding materials. We make a simple model for the relation between dielectric constant of environment and a static dielectric constant describing the effects of electrons in core states, $\sigma$ bonds and surrounding materials. Although the model is very simple, calculated results well reproduce experimental transition energy dependence on dielectric constant of various surrounding materials.Comment: 5pages, 4 figure

Optical Control Of The Two-dimensional Electron-gas Density In Modulation-doped Quantum Wells Studied By Magnetophotoluminescence

We show by magnetoluminescence and photoluminescence excitation spectroscopy that the density of the two-dimensional electron gas in a GaAs/AlxGa1-xAs asymmetric modulation-doped multiple quantum-well structure is changed when the sample is excited with photons having an energy lower than the alloy band gap. © 1993 The American Physical Society.4831967196

Charged exctions in the fractional quantum Hall regime

We study the photoluminescence spectrum of a low density ($\nu <1$) two-dimensional electron gas at high magnetic fields and low temperatures. We find that the spectrum in the fractional quantum Hall regime can be understood in terms of singlet and triplet charged-excitons. We show that these spectral lines are sensitive probes for the electrons compressibility. We identify the dark triplet charged-exciton and show that it is visible at the spectrum at $T<2$ K. We find that its binding energy scales like $e^{2}/l$, where $l$ is the magnetic length, and it crosses the singlet slightly above 15 T.Comment: 10 pages, 5 figure

Skyrmionic excitons

We investigate the properties of a Skyrmionic exciton consisting of a negatively charged Skyrmion bound to a mobile valence hole. A variational wave function is constructed which has the generalized total momentum P as a good quantum number. It is shown that the Skyrmionic exciton can have a larger binding energy than an ordinary magnetoexciton and should therefore dominate the photoluminescence spectrum in high-mobility quantum wells and heterojunctions where the electron-hole separation exceeds a critical value. The dispersion relation for the Skyrmionic exciton is discussed.Comment: 9 pages, RevTex, 2 PostScript figures. Replaced with version to appear in Phys. Rev. B Rapid Communications. Short discussion of variational state adde

Long-lived charged multiple-exciton complexes in strong magnetic fields

We consider the charged exciton complexes of an ideal two-dimensional electron-hole system in the limit of strong magnetic fields. A series of charged multiple-exciton states is identified and variational and finite-size exact diagonalization calculations are used to estimate their binding energies. We find that, because of a hidden symmetry, bound states of excitons and an additional electron cannot be created by direct optical absorption and, once created, have an infinite optical recombination lifetime. We also estimate the optical recombination rates when electron and hole layers are displaced and the hidden symmetry is violated.Comment: 12 pages + 2 PostScript figures, Revtex, Submitted to Phys. Rev. Let

Absolute EUV reflectivity measurements using a broadband high-harmonic source and an in situ single exposure reference scheme

We present a tabletop setup for extreme ultraviolet (EUV) reflection spectroscopy in the spectral range from 40 to 100 eV by using high-harmonic radiation. The simultaneous measurements of reference and sample spectra with high energy resolution provide precise and robust absolute reflectivity measurements, even when operating with spectrally fluctuating EUV sources. The stability and sensitivity of EUV reflectivity measurements are crucial factors for many applications in attosecond science, EUV spectroscopy, and nano-scale tomography. We show that the accuracy and stability of our in situ referencing scheme are almost one order of magnitude better in comparison to subsequent reference measurements. We demonstrate the performance of the setup by reflective near-edge x-ray absorption fine structure measurements of the aluminum L2/3 absorption edge in α-Al2O3 and compare the results to synchrotron measurements