1,082 research outputs found
Continuous-feed nanocasting process for the synthesis of bismuth nanowire composites
We present a novel, continuous-feed nanocasting procedure for the synthesis
of bismuth nanowire structures embedded in the pores of a mesoporous silica
template. The immobilization of a bismuth salt inside the silica template from
a diluted metal salt solution yields a sufficiently high loading to obtain
electrically conducting bulk nanowire composite samples after reduction and
sintering the nanocomposite powders. Electrical resistivity measurements of
sintered bismuth nanowires embedded in the silica template reveal
size-quantization effects
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
The effects of hole injection in amorphous-IGZO is analyzed by means of
first-principles calculations. The injection of holes in the valence band tail
states leads to their capture as a polaron, with high self-trapping energies
(from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides
and remain localized close to the hole injection source due to the presence of
a large diffusion energy barrier (of at least 0.6eV). Their diffusion mechanism
can be mediated by the presence of hydrogen. The capture of these holes is
correlated with the low off-current observed for a-IGZO transistors, as well
as, with the difficulty to obtain a p-type conductivity. The results further
support the formation of peroxides as being the root cause of Negative bias
illumination stress (NBIS). The strong self-trapping substantially reduces the
injection of holes from the contact and limits the creation of peroxides from a
direct hole injection. In presence of light, the concentration of holes
substantially rises and mediates the creation of peroxides, responsible for
NBIS.Comment: 8 pages, 8 figures, to be published in Journal of Applied Physic
Phonon driven spin distribution due to the spin-Seebeck effect
Here we report on measurements of the spin-Seebeck effect of GaMnAs over an
extended temperature range alongside the thermal conductivity, specific heat,
magnetization, and thermoelectric power. The amplitude of the spin-Seebeck
effect in GaMnAs scales with the thermal conductivity of the GaAs substrate and
the phonon-drag contribution to the thermoelectric power of the GaMnAs,
demonstrating that phonons drive the spin redistribution. A phenomenological
model involving phonon-magnon drag explains the spatial and temperature
dependence of the measured spin distribution.Comment: 12 pages, 3 figure
Charge Transport Properties of a Metal-free Phthalocyanine Discotic Liquid Crystal
Discotic liquid crystals can self-align to form one-dimensional
semiconducting wires, many tens of microns long. In this letter, we describe
the preparation of semiconducting films where the stacking direction of the
disc-like molecules is perpendicular to the substrate surface. We present
measurements of the charge carrier mobility, applying temperature-dependent
time-of-flight transient photoconductivity, space-charge limited current
measurements, and field-effect mobility measurements. We provide experimental
verification of the highly anisotropic nature of semiconducting films of
discotic liquid crystals, with charge carrier mobilities of up to
2.8x10cm/Vs. These properties make discotics an interesting choice
for applications such as organic photovoltaics.Comment: 5 pages, 5 figure
Thermoelectricity in Nanowires: A Generic Model
By employing a Boltzmann transport equation and using an energy and size
dependent relaxation time () approximation (RTA), we evaluate
self-consistently the thermoelectric figure-of-merit of a quantum wire
with rectangular cross-section. The inferred shows abrupt enhancement in
comparison to its counterparts in bulk systems. Still, the estimated for
the representative BiTe nanowires and its dependence on wire parameters
deviate considerably from those predicted by the existing RTA models with a
constant . In addition, we address contribution of the higher energy
subbands to the transport phenomena, the effect of chemical potential tuning on
, and correlation of with quantum size effects (QSEs). The obtained
results are of general validity for a wide class of systems and may prove
useful in the ongoing development of the modern thermoelectric applications.Comment: 15 pages, 6 figures; Dedicated to the memory of Amirkhan Qezell
Atomic layer deposition of titanium nitride for quantum circuits
Superconducting thin films with high intrinsic kinetic inductance are of
great importance for photon detectors, achieving strong coupling in hybrid
systems, and protected qubits. We report on the performance of titanium nitride
resonators, patterned on thin films (9-110 nm) grown by atomic layer
deposition, with sheet inductances of up to 234 pH/square. For films thicker
than 14 nm, quality factors measured in the quantum regime range from 0.4 to
1.0 million and are likely limited by dielectric two-level systems.
Additionally, we show characteristic impedances up to 28 kOhm, with no
significant degradation of the internal quality factor as the impedance
increases. These high impedances correspond to an increased single photon
coupling strength of 24 times compared to a 50 Ohm resonator, transformative
for hybrid quantum systems and quantum sensing.Comment: 10 pages, 8 figures including supplemental material
Magnon-drag thermopower and Nernst coefficient in Fe, Co, and Ni
Magnon-drag is shown to dominate the thermopower of elemental Fe from 2 to 80
K and of elemental Co from 150 to 600 K; it is also shown to contribute to the
thermopower of elemental Ni from 50 to 500 K. Two theoretical models are
presented for magnon-drag thermopower. One is a hydrodynamic theory based
purely on non-relativistic, Galilean, spin-preserving electron-magnon
scattering. The second is based on spin-motive forces, where the thermopower
results from the electric current pumped by the dynamic magnetization
associated with a magnon heat flux. In spite of their very different
microscopic origins, the two give similar predictions for pure metals at low
temperature, allowing us to semi-quantitatively explain the observed
thermopower of elemental Fe and Co without adjustable parameters. We also find
that magnon-drag may contribute to the thermopower of Ni. A spin-mixing model
is presented that describes the magnon-drag contribution to the Anomalous
Nernst Effect in Fe, again enabling a semi-quantitative match to the
experimental data without fitting parameters. Our work suggests that particle
non-conserving processes may play an important role in other types of drag
phenomena, and also gives a predicative theory for improving metals as
thermoelectric materials.Comment: main text plus 7 figures; accepted in PRB September 201
Evolution of structural and electronic properties of highly mismatched InSb films
We have investigated the evolution of structural and electronic properties of highly mismatched InSb films, with thicknesses ranging from 0.1 to 1.5 μm. Atomic force microscopy, cross-sectional transmission electron microscopy, and high-resolution x-ray diffraction show that the 0.1 μm films are nearly fully relaxed and consist of partially coalesced islands, which apparently contain threading dislocations at their boundaries. As the film thickness increases beyond 0.2 μm, the island coalescence is complete and the residual strain is reduced. Although the epilayers have relaxed equally in the 〈110〉 in-plane directions, the epilayer rotation about an in-plane axis (epilayer tilt) is not equal in both 〈110〉 in-plane directions. Interestingly, the island-like surface features tend to be preferentially elongated along the axis of epilayer tilt. Furthermore, epilayer tilt which increases the substrate offcut (reverse tilt) is evident in the [110] direction. High-resolution transmission electron microscopy indicates that both pure-edge and 60° misfit dislocations contribute to the relaxation of strain. In addition, as the film thickness increases, the threading dislocation density decreases, while the corresponding room-temperature electron mobility increases. The other structural features, including the residual strain, and the surface and interface roughness, do not appear to impact the electron mobility in these InSb films. Together, these results suggest that free-carrier scattering from the threading dislocations is the primary room-temperature mobility-limiting mechanism in highly mismatched InSb films. Finally, we show quantitatively that free-carrier scattering from the lattice dilation associated with threading dislocations, rather than scattering from a depletion potential surrounding the dislocations, is the dominant factor limiting the electron mobility. © 2000 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70332/2/JAPIAU-88-11-6276-1.pd
- …