Ti3SiC2-formation during Ti–C–Si multilayer deposition by magnetron sputtering at 650 °C

Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed

Effect of atomic mixing on the electrochemical and corrosion properties of Ni-Ti surfaces

Nickel films of 10nm thickness on titan'um substrates were irradiated with 10keV Ar+ ions to various fluences using dynamic recoil mixing (DRM) conditions, where sputtered nickel is continuously replenished. Rutherford backscattering (RBS) analysis of the resulting films shows considerable Ni-Ti mixing and the possible formation of a Ni-Ti compound. Potentiostatic polarisation curves for these mixed films indicate that their life for use as electrocatalytic electrodes for chlorine liberation is increased by a factor of five