585 research outputs found
Processing Issues in Top-Down Approaches to Quantum Computer Development in Silicon
We describe critical processing issues in our development of single atom
devices for solid-state quantum information processing. Integration of single
31P atoms with control gates and single electron transistor (SET) readout
structures is addressed in a silicon-based approach. Results on electrical
activation of low energy (15 keV) P implants in silicon show a strong dose
effect on the electrical activation fractions. We identify dopant segregation
to the SiO2/Si interface during rapid thermal annealing as a dopant loss
channel and discuss measures of minimizing it. Silicon nanowire SET pairs with
nanowire width of 10 to 20 nm are formed by electron beam lithography in SOI.
We present first results from Coulomb blockade experiments and discuss issues
of control gate integration for sub-40nm gate pitch levels
Detection of low energy single ion impacts in micron scale transistors at room temperature
We report the detection of single ion impacts through monitoring of changes
in the source-drain currents of field effect transistors (FET) at room
temperature. Implant apertures are formed in the interlayer dielectrics and
gate electrodes of planar, micro-scale FETs by electron beam assisted etching.
FET currents increase due to the generation of positively charged defects in
gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel
regions. Implant damage is repaired by rapid thermal annealing, enabling
iterative cycles of device doping and electrical characterization for
development of single atom devices and studies of dopant fluctuation effects
Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically
enriched 28Si and find high degrees of electrical activation and low levels of
dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance
shows that spin echo decay is sensitive to the dopant depths, and the interface
quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles
peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface
is passivated with hydrogen. These measurements provide benchmark data for the
development of devices in which quantum information is encoded in donor
electron spins
Chemical Raman Enhancement of Organic Adsorbates on Metal Surfaces
Using a combination of first-principles theory and experiments, we provide a
quantitative explanation for chemical contributions to surface-enhanced Raman
spectroscopy for a well-studied organic molecule, benzene thiol, chemisorbed on
planar Au(111) surfaces. With density functional theory calculations of the
static Raman tensor, we demonstrate and quantify a strong mode-dependent
modification of benzene thiol Raman spectra by Au substrates. Raman active
modes with the largest enhancements result from stronger contributions from Au
to their electron-vibron coupling, as quantified through a deformation
potential, a well-defined property of each vibrational mode. A straightforward
and general analysis is introduced that allows extraction of chemical
enhancement from experiments for specific vibrational modes; measured values
are in excellent agreement with our calculations.Comment: 5 pages, 4 figures and Supplementary material included as ancillary
fil
Stark shift and field ionization of arsenic donors in Si-SOI structures
We develop an efficient back gate for silicon-on-insulator (SOI) devices
operating at cryogenic temperatures, and measure the quadratic hyperfine Stark
shift parameter of arsenic donors in isotopically purified Si-SOI layers
using such structures. The back gate is implemented using MeV ion implantation
through the SOI layer forming a metallic electrode in the handle wafer,
enabling large and uniform electric fields up to 2 V/m to be
applied across the SOI layer. Utilizing this structure we measure the Stark
shift parameters of arsenic donors embedded in the Si SOI layer and find
a contact hyperfine Stark parameter of m/V. We also demonstrate electric-field driven dopant ionization in
the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure
- …