397 research outputs found

    Complexity of Leading Digit Sequences

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    Let Sa,bS_{a,b} denote the sequence of leading digits of ana^n in base bb. It is well known that if aa is not a rational power of bb, then the sequence Sa,bS_{a,b} satisfies Benford's Law; that is, digit dd occurs in Sa,bS_{a,b} with frequency log⁥b(1+1/d)\log_{b}(1+1/d), for d=1,2,
,b−1d=1,2,\dots,b-1. In this paper, we investigate the \emph{complexity} of such sequences. We focus mainly on the \emph{block complexity}, pa,b(n)p_{a,b}(n), defined as the number of distinct blocks of length nn appearing in Sa,bS_{a,b}. In our main result we determine pa,b(n)p_{a,b}(n) for all squarefree bases b≄5b\ge 5 and all rational numbers a>0a>0 that are not integral powers of bb. In particular, we show that, for all such pairs (a,b)(a,b), the complexity function pa,b(n)p_{a,b}(n) is \emph{affine}, i.e., satisfies pa,b(n)=ca,bn+da,bp_{a,b}(n)=c_{a,b} n + d_{a,b} for all n≄1n\ge1, with coefficients ca,b≄1c_{a,b}\ge1 and da,b≄0d_{a,b}\ge0, given explicitly in terms of aa and bb. We also show that the requirement that bb be squarefree cannot be dropped: If bb is not squarefree, then there exist integers aa with 1<a<b1<a<b for which pa,b(n)p_{a,b}(n) is not of the above form. We use this result to obtain sharp upper and lower bounds for pa,b(n)p_{a,b}(n), and to determine the asymptotic behavior of this function as b→∞b\to\infty through squarefree values. We also consider the question which linear functions p(n)=cn+dp(n)=cn+d arise as the complexity function pa,b(n)p_{a,b}(n) of some leading digit sequence Sa,bS_{a,b}. We conclude with a discussion of other complexity measures for the sequences Sa,bS_{a,b} and some open problems

    A prescriptive approach to qualify and quantify customer value for value-based requirements engineering

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    Recently, customer-based product development is becoming a popular paradigm. Customer expectations and needs can be identified and transformed into requirements for product design with the help of various methods and tools. However, in many cases, these models fail to focus on the perceived value that is crucial when customers make the decision of purchasing a product. In this paper, a prescriptive approach to support value-based requirements engineering (RE) is proposed, describing the foundations, procedures and initial applications in the context of RE for commercial aircraft. An integrated set of techniques, such as means-ends analysis, part-whole analysis and multi-attribute utility theory is introduced in order to understand customer values in depth and width. Technically, this enables identifying the implicit value, structuring logically collected statements of customer expectations and performing value modelling and simulation. Additionally, it helps to put in place a system to measure customer satisfaction that is derived from the proposed approach. The approach offers significant potential to develop effective value creation strategies for the development of new product

    Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

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    High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (LchL_{ch}) down to 20 nm are fabricated by integrating a higher-k LaAlO3LaAlO_3-based gate-stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5 nm) Al2O3Al_2O_3 interfacial layer between the higher k LaAlO3LaAlO_3 and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63 mV/dec is demonstrated at sub-80-nm LchL_{ch} for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.Chemistry and Chemical Biolog

    III-V 4D Transistors

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    We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with 3×43×4 arrays show high drive current of 1.35mA/ÎŒm1.35mA/ \mu m and high transconductance of 0.85mS/ÎŒm0.85mS/ \mu m. The vertical stacking of the III-V nanowires have provided an elegant solution to the drivability bottleneck of nanowire devices and is promising for future low-power logic and RF application.Chemistry and Chemical Biolog
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