A nonlinear analysis for sloshing forces and moments on a cylindrical tank

Sloshing forces and moments on cylindrical tank - integration of nonlinear force equation

An approximate nonlinear analysis of the stability of sloshing modes under transla- tional and rotational excitation

Nonlinear analysis of sloshing mode stability under translational and rotational excitatio

Multiple transitions of the spin configuration in quantum dots

Single electron tunneling is studied in a many electron quantum dot in high magnetic fields. For such a system multiple transitions of the spin configuration are theoretically predicted. With a combination of spin blockade and Kondo effect we are able to detect five regions with different spin configurations. Transitions are induced with changing electron numbers.Comment: 4 pages, 5 figure

Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be about 10^4 times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and therefore a greatly increased contribution of tunneling to the electrical transport.Comment: 3 pages, 2 EPS-figures; accepted for publication in Appl. Phys. Let

Non-invasive detection of molecular bonds in quantum dots

We performed charge detection on a lateral triple quantum dot with star-like geometry. The setup allows us to interpret the results in terms of two double dots with one common dot. One double dot features weak tunnel coupling and can be understood with atom-like electronic states, the other one is strongly coupled forming molecule-like states. In nonlinear measurements we identified patterns that can be analyzed in terms of the symmetry of tunneling rates. Those patterns strongly depend on the strength of interdot tunnel coupling and are completely different for atomic- or molecule-like coupled quantum dots allowing the non-invasive detection of molecular bonds.Comment: 4 pages, 4 figure

Scaling of nano-Schottky-diodes

A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a reduced (non-bulk) Schottky barrier height, this effect provides an explanation for several experimental observations of enhanced conduction in small Schottky diodes.Comment: 4 pages, 4 figures, accepted for publication in Appl. Phys. Lett., some minor additions and correction