Small quantity production of complex chromium alloy sheet /Cr-7Mo-2Ta-0.09C-0.1Y/ Final report

Fabrication of Cr-Mo-Ta-C-Y alloy shee

Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface, and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schroedinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.Comment: 4pgs, 3 fig

Research and investigation of geology, mineral, and water resources of Maryland

The authors have identified the following significant results. Field work in Baltimore County revealed that the signature returns of serpentinitic and nonserpentinitic rocks correlates with the vegetation cover and land use pattern. In Maryland Piedmont, bedrock lithology and structure are enhanced only to the extent that land use is geologically dictated. Two prominent sets of linear features are detected on ERTS-1 imagery at N 45 deg E and N 20 deg E. Beaches of Chesapeake Bay are classified as broad and narrow beaches based on the width of the backshore zone. It is shown by comparing historical shorelines of Ocean City, from the inlet to the Maryland-Delaware line that reversal zones of erosion and accretion occur at different locations for different periods. High reflectance levels (high marsh-high topographic areas) for the lower Eastern Shore are found to be distributed as two distinct trending linear ridge systems. Observations of MSS band 5 dated 9 April 1974 exhibited an unique sedimentation pattern for Chesapeake Bay. Following a 1.5 inch rainfall, heavy concentration of suspended sediments is observed on the imagery, particularly in the area of the turbidity maximum

Patenting and licensing of university research: promoting innovation or undermining academic values?

Since the 1980s in the US and the 1990s in Europe, patenting and licensing activities by universities have massively increased. This is strongly encouraged by governments throughout the Western world. Many regard academic patenting as essential to achieve 'knowledge transfer' from academia to industry. This trend has far-reaching consequences for access to the fruits of academic research and so the question arises whether the current policies are indeed promoting innovation or whether they are instead a symptom of a pro-intellectual property (IP) culture which is blind to adverse effects. Addressing this question requires both empirical analysis (how real is the link between academic patenting and licensing and 'development' of academic research by industry?) and normative assessment (which justifications are given for the current policies and to what extent do they threaten important academic values?). After illustrating the major rise of academic patenting and licensing in the US and Europe and commenting on the increasing trend of 'upstream' patenting and the focus on exclusive as opposed to non-exclusive licences, this paper will discuss five negative effects of these trends. Subsequently, the question as to why policymakers seem to ignore these adverse effects will be addressed. Finally, a number of proposals for improving university policies will be made

Effects of Terms of Trade Gains and Tariff Changes on the Measurement of US Productivity Growth

The acceleration in US productivity growth since 1995 is often attributed to declining prices for information technology (IT ) goods, and therefore enhanced productivity growth in that sector. We investigate an alternative explanation for these IT price movements: gains in the US terms of trade and tariff reductions, especially for IT products, which led to greater gains than shown by official indexes. We do not, however, investigate the indexes used to deflate the domestic absorption components of GDP, and if upward biases are present in those indexes that could offset some of the effects of mismeasured export and import indexes. (JEL C43, E23, F13, F14, J24

Effects of Terms of Trade Gains and Tariff Changes on the Measurement of U.S. Productivity Growth

Since 1995, growth in productivity in the United States appears to have accelerated dramatically. In this paper, we argue that part of this apparent speed-up actually represents gains in the terms of trade and tariff reductions, especially for information-technology products. We demonstrate how unmeasured gains in the terms of trade and declines in tariffs can cause conventionally measured growth in real output and productivity to be overstated. Building on the GDP function approach of Diewert and Morrison, we develop methods for measuring these effects. From 1995 through 2006, the average growth rates of our alternative price indexes for U.S. imports are 1.5% per year lower than the growth rate of price indexes calculated using official methods. Thus properly measured terms-of-trade gain can account for close to 0.2 percentage points per year, or about 20%, of the 1995-2006 apparent increase in productivity growth for the U.S. economy. Bias in the price indexes used to deflate domestic output is a question beyond the scope of this paper, but if upward bias were also present in those indexes, this could offset some of the effects of mismeasurement of gains in terms of trade.

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of the internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the non-volatile memory applications because of a larger resistance on/off ratio.Comment: 14 pages, 8 figure